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Electromigration and Interfacial Studies of Eutectic SnIn Solder Reflowed on Various Substrates
其他题名Electromigration and Interfacial Studies of Eutectic SnIn Solder Reflowed on Various Substrates
John Paul Daghfal
学位类型博士
导师尚建库
2009-05-26
学位授予单位中国科学院金属研究所
学位授予地点金属研究所
学位专业材料学
关键词In-sn共晶 电迁移 偏析 界面 Nife镀层 Fesn2 Ni3sn4 电镀ni 化学镀ni-p
摘要Interfacial reaction studies between eutectic Sn-In and several substrate metalizations have been carried out in an effort to further understand this Pb-free solder. Copper, Nickel, NiP and NiFe, with various Fe concentrations, were used as reflow substrates with Sn-In eutectic solder. In addition, extensive research was conducted on the effects of current stressing on Sn-In Solder/Cu and Ni interconnects. Structural changes resulting from high-density electric currents were examined in a eutectic Sn-In/Cu interconnect. Under electrical loading, Sn and In migrated in opposite directions, creating a partition of the Sn- and In-rich phases between the anode and the cathode. At the anode, a net gain of Sn atoms resulted in the formation of massive, columnar hillocks on the surface, but a net loss of In led to dissolution and disappearance of the In-rich intermetallic compound layer. At the cathode, the exodus of Sn left valleys adjacent to the In-rich regions on the surface, while the amount of the In-rich phase grew, due to the net influx of In at the expense of the anode In-rich intermetallic layer. Similar electromigration research was conducted on Sn-In/Ni interconnects. The effects of current stressing were very similar in that the partitioning of the phases took place as a result of electromigration. However, the IMC thickness was not altered or enhanced by the partitioning effect of the current. This indicated that the changes in the Sn-In/Cu interconnects were brought upon strictly by electromigration and not thermomigration. Additional annealing and kinetic experiments carried out on the Sn-In/Ni interconnect revealed the effects of temperature on the IMC of the system. IMC compositions and structural morphology were obtained using SEM and EDS analysis. A Ni(In,Sn)2 intermetallic phase formed upon reflow and grew exponentially with temperature and time. The rate controlling mechanisms, based on n-values obtained from experimental data, are discussed along with the activation energies for the reactions. The growth kinetics and interfacial studies carried out on Sn-In/Cu, and NiP gave different results than those done on electroplated Ni substrates. The reaction rate was much faster on the Cu substrates while the NiP showed very slow reaction rates as well as growth behavior when reflowed with Sn-In eutectic solders. In some cases, two mechanisms contributed to the IMC growth, under solid-state conditions, dependant on the annealing temperature used. The activation energies for Cu and NiP were obtained and are 44 and 86 kJ mol-1, respectively. Interfacial reactions between eutectic Sn-In solder alloy and Ni-10%Fe were examined by cross-sectional scanning and transmission electron microscopy (SEM/TEM). It was found that Fe addition to an electroplated Nickel substrate greatly alters the interfacial reactions and intermetallic compositions after reflow with SnIn solder. Upon reflow, two phases can be detected in the IMC, a Ni3Sn4 and a FeSn2 phase. Under solid state annealing conditions, the IMC grows at a very rapid rate in two continuous layers. The composition of these layers was found to be Fe15Ni23In17Sn44 adjacent to the substrate and Ni30In19Sn50 adjacent to the solder. The solid-state activation energy was also calculated for a pure Nickel/Sn-In IMC growth to be 114.74 kJ mol-1, and 43.97kJ mol-1, for the Ni10%Fe/SnIn IMC. In a related study, interfacial interactions in a Ni(x)Fe-SnIn eutectic solder (x=30, 55 at%), have been examined. Transmission and scanning electron microscopy (TEM/SEM) were utilized to investigate the structure, composition, and morphology of the intermetallic compounds (IMC’s). Upon reflow, Ni3Sn4 and FeSn2 phases appeared at the interface along with Cu6Sn5 in the solder. Annealing experiments revealed the formation of a bi-layer IMC, Fe-rich adjacent to the NiFe metalization and Ni-rich on the solder side. Kinetic studies established the apparent activation energies for both systems to be 51.8 kJ mol-1 and 85.1 kJ mol-1, for 30 and 55%Fe contents, respectively. In the Fe-rich system, globular Ni3Sn4 crystals were formed upon reflow, but were changed into a cubic/faceted structure after annealing.
其他摘要为进一步提高对In-Sn共晶无铅焊料的认识,通过选用Cu、Ni、NiP,以及不同Fe含量的NiFe作为In-Sn共晶焊料的回流基体,研究了In-Sn共晶焊料与不同基体金属之间的界面反应,以及电流应力对In-Sn焊料/Cu互联和In-Sn焊料/Ni互联的影响。 研究了高密度电流所引起的In-Sn/Cu互联微观结构改变。加载电流后,Sn和In分别往相反的方向迁移,而在阳极和阴极之间形成富Sn和富In的相分离区。在阳极,Sn原子的富集在表面促进了大量柱状凸起析出,而In原子的流失则造成了富In的金属间化合物层的溶解和消失。在阴极,Sn的流失使得表面靠近富In区的地方产生凹陷,而阳极处因富In的金属间化合物层的消失所产生的净In流,促进了阴极处富In相的生长。 In-Sn/Ni互联体系中存在相似的电迁移作用。由于电迁移作用的存在,电流也导致了类似的相分离,但IMC的厚度却并未因电流的相分离作用而改变或增加。说明In-Sn/Cu互联中的相变化严格地受电迁移而非热迁移的控制。开展了In-Sn/Ni互连的时效和动力学实验,揭示了温度对IMC系统的影响。利用SEM和EDS分析获得了IMC的成份和微观结构特点。回流处理后,有 (Ni,In)Sn2 这一新的金属间化合物相产生,其生长速率与温度和时间呈抛物线规律。利用实验数据计算出n值,并根据该值讨论了反应激活能和反应速率控制机制。 In-Sn/Cu和In-Sn/NiP体系的生长动力学和介面研究结果与基体为电镀Ni的结果不同。比较而言,与In-Sn共晶焊料回流时,Cu作基体时的反应速度非常快,而NiP基体的反应速度和生长速度却很慢。有两种机制在固态条件下促进IMC的生长,具体是哪种机制取决于所选用的时效温度。Cu和NiP作基体时的激活能分别是44 kJ/mol和86kJ/mol。 通过对横截面微观结构的观察,研究了In-Sn焊料与Ni-10%Fe之间的介面反应。研究发现在电镀Ni基体中加入Fe后,会极大地改变焊料回流的介面反应和金属间化合物成分。经过回流处理后,可以在IMC中检测到两种相,即Ni3Sn4相和FeSn2相。时效条件下,IMC生长速度很快,形成两个连续的层。靠近基体部分的成分是Fe15Ni23In17Sn44,而靠近焊料部分的成分是Ni30In19Sn50。计算得出Ni/SnIn IMC和Ni10%Fe/SnIn IMC的固态激活能分别是114.74 kJ/mol and 43.97kJ/mol。 研究了Ni(x)Fe-SnIn(x=30, 55 at%)体系的界面反应。利用TEM和SEM观察了中间组成物的微观结构并确定了其化学成分。回流处理后,界面处有Ni3Sn4和FeSn2相生成,焊料中有Cu6Sn5相生成。退火处理后生成的IMC层具有双层结构,贴近NiFe金属的一层富Fe,而焊料处的一层则富Ni。动力学研究表明含Fe量为30%的体系,其表观激活能为51.8 kJ/mol,而含Fe量为55%的体系,其表观激活能为85.1 kJ/mol。在富Fe的体系当中,回流后会有球状的Ni3Sn4晶体生成,并且在退火后转变为多面方形结构。
页数165
语种中文
文献类型学位论文
条目标识符http://ir.imr.ac.cn/handle/321006/17212
专题中国科学院金属研究所
推荐引用方式
GB/T 7714
John Paul Daghfal. Electromigration and Interfacial Studies of Eutectic SnIn Solder Reflowed on Various Substrates[D]. 金属研究所. 中国科学院金属研究所,2009.
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