Laminated three-dimensional carbon nanotube integrated circuits

doi:10.1039/d2nr01498j

IMR OpenIR

	Laminated three-dimensional carbon nanotube integrated circuits
	Jian, Yang 1,2; Sun, Yun 2,3; Feng, Shun 2,4; Zang, Chao 2,3; Li, Bo 2,3; Qiu, Song 5; Li, Qing-Wen 5; Yan, Xin 1; Sun, Dong-Ming 2,3
通讯作者	Qiu, Song(sqiu2010@sinano.ac.cn) ; Yan, Xin(yanxin@ise.neu.edu.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn)
	2022-04-06
发表期刊	NANOSCALE
ISSN	2040-3364
页码	6
摘要	The fabrication procedure for each layer of the device in monolithic three-dimensional (3D) integration still follows the design philosophy of traditional planar silicon-based circuits, and such integrated circuits will ultimately be limited by the same scaling constraints that face silicon field-effect transistors. We report the direct formation of laminated 3D integrated circuits by the layer-by-layer stacking of each component through two different techniques. One is to use carbon nanotubes (CNTs) as the channels of thin-film transistors because of their low-temperature fabrication and layer-to-layer transfer capabilities. The other is to use a suitable separator between every two layers to isolate them, because the separator is not only able to maintain the stability of the performance of each component after coating, but is also a good insulator that can prevent interlayer interactions. A 5-stage CNT ring oscillator laminated onto a single inverter is finally reported, which can reduce the device area by approximately 80%, and should be greatly helpful for the continuous improvement of device functionality and integration.
资助者	National Key Research and Development Program of China ; National Natural Science Foundation of China ; Key-Area Research and Development Program of Guangdong Province ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Shandong Natural Science Foundation of China ; Chinese Academy of Sciences
DOI	10.1039/d2nr01498j
收录类别	SCI
语种	英语
资助项目	National Key Research and Development Program of China[2021YFA1200013] ; National Key Research and Development Program of China[2020YFA0714700] ; National Natural Science Foundation of China[62125406] ; National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; Key-Area Research and Development Program of Guangdong Province[2019B010934001] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Shandong Natural Science Foundation of China[ZR2019ZD49] ; Chinese Academy of Sciences[SYNL2020] ; Chinese Academy of Sciences[SKLA-2019-03]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000787852700001
出版者	ROYAL SOC CHEMISTRY
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/172576
专题	中国科学院金属研究所
通讯作者	Qiu, Song; Yan, Xin; Sun, Dong-Ming
作者单位	1.Northeastern Univ, Coll Informat Sci & Engn, 3-11 Wenhua Rd, Shenyang 110819, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, 393 Huaxiazhong Rd, Shanghai 200031, Peoples R China 5.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, 398 Ruoshui Rd, Suzhou 215123, Peoples R China
推荐引用方式 GB/T 7714	Jian, Yang,Sun, Yun,Feng, Shun,et al. Laminated three-dimensional carbon nanotube integrated circuits[J]. NANOSCALE,2022:6.
APA	Jian, Yang.,Sun, Yun.,Feng, Shun.,Zang, Chao.,Li, Bo.,...&Sun, Dong-Ming.(2022).Laminated three-dimensional carbon nanotube integrated circuits.NANOSCALE,6.
MLA	Jian, Yang,et al."Laminated three-dimensional carbon nanotube integrated circuits".NANOSCALE (2022):6.