Ultrafast growth of submillimeter-scale single-crystal MoSe2 by pre-alloying CVD

doi:10.1039/d2nh00105e

IMR OpenIR

	Ultrafast growth of submillimeter-scale single-crystal MoSe2 by pre-alloying CVD
	Xin, Xing 1,2,3; Chen, Jiamei 1,2; Zhang, Yanmei 1,2; Chen, Mao-Lin 4; Bao, Youzhe 1,2; Liu, Weizhen 1,2; Liu, Yichun 1,2; Xu, Haiyang 1,2; Ren, Wencai 3,5
通讯作者	Xu, Haiyang(hyxu@nenu.edu.cn) ; Ren, Wencai(wcren@imr.ac.cn)
	2022-04-12
发表期刊	NANOSCALE HORIZONS
ISSN	2055-6756
页码	9
摘要	The synthesis of large-scale monolayer single-crystal MX2 (M = Mo, W; X = S, Se), a typical transition metal dichalcogenide (TMD), is the premise for their future applications. Compared with insulating substrates such as SiO2 and sapphire, Au is more favourable for the fast growth of TMDs by chemical vapor deposition (CVD). Recently, large-scale single-crystal WX2 was successfully grown and transferred on Au. In sharp contrast, the growth and transfer for monolayer MoX2 is still very challenging, because Au has a higher solubility of Mo and stronger interaction with MoX2 than WX2. Compared with the most studied MoS2, MoSe2 is superior in many aspects because of the narrower band gap and tunable excitonic charging effects. However, the synthesis of large-scale single-crystal MoSe2 on Au has not been reported so far. Here, a pre-alloying CVD method was developed to solve the problems for the growth and non-destructive transfer of MoX2. It has realized the ultrafast growth (30 s) of submillimeter-scale (560 mu m) single-crystal MoSe2 for the first time. As-grown samples are strictly monolayers with good optical and electrical properties, which can be easily transferred without sacrificing Au foils by the electrochemical bubbling method. It was found that pre-alloying not only passivates the energetically active sites on Au but also weakens the interaction between Au and MoSe2, which is responsible for the ultrafast growth and easy transfer of MoSe2. This method is also universal for the fast growth and non-destructive transfer of other 2D TMDs.
资助者	National Science Fund for Distinguished Young Scholars ; Program of National Natural Science Foundation of China ; Chinese Academy of Sciences ; National Key Research and Development Program of China ; Fundamental Research Funds for the Central Universities ; Jilin Province ; LiaoNing Revitalization Talents Program
DOI	10.1039/d2nh00105e
收录类别	SCI
语种	英语
资助项目	National Science Fund for Distinguished Young Scholars[52025022] ; Program of National Natural Science Foundation of China[52002056] ; Program of National Natural Science Foundation of China[11874104] ; Program of National Natural Science Foundation of China[12074060] ; Program of National Natural Science Foundation of China[51872043] ; Program of National Natural Science Foundation of China[U19A2091] ; Program of National Natural Science Foundation of China[51732003] ; Chinese Academy of Sciences[XDB30000000] ; Chinese Academy of Sciences[ZDBS-LY-JSC027] ; National Key Research and Development Program of China[2021YFA0716400] ; National Key Research and Development Program of China[2019YFB2205100] ; Fundamental Research Funds for the Central Universities[2412020QD014] ; Fundamental Research Funds for the Central Universities[2412021ZD006] ; Fundamental Research Funds for the Central Universities[2412019BJ006] ; Fundamental Research Funds for the Central Universities[2412021ZD012] ; Jilin Province[YDZJ202101ZYTS046] ; Jilin Province[YDZJ202101ZYTS133] ; Jilin Province[JJKH20211273KJ] ; LiaoNing Revitalization Talents Program[XLYC1808013]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000788242100001
出版者	ROYAL SOC CHEMISTRY
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/172732
专题	中国科学院金属研究所
通讯作者	Xu, Haiyang; Ren, Wencai
作者单位	1.Northeast Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China 2.Northeast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 03006, Peoples R China 5.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Xin, Xing,Chen, Jiamei,Zhang, Yanmei,et al. Ultrafast growth of submillimeter-scale single-crystal MoSe2 by pre-alloying CVD[J]. NANOSCALE HORIZONS,2022:9.
APA	Xin, Xing.,Chen, Jiamei.,Zhang, Yanmei.,Chen, Mao-Lin.,Bao, Youzhe.,...&Ren, Wencai.(2022).Ultrafast growth of submillimeter-scale single-crystal MoSe2 by pre-alloying CVD.NANOSCALE HORIZONS,9.
MLA	Xin, Xing,et al."Ultrafast growth of submillimeter-scale single-crystal MoSe2 by pre-alloying CVD".NANOSCALE HORIZONS (2022):9.