New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization

doi:10.1016/j.jmst.2021.05.080

IMR OpenIR

	New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization
	Huang, Jianqi 1,2; Liu, Zhiyong 1,2; Yang, Teng 1,2; Zhang, Zhidong 1,2
通讯作者	Yang, Teng(yangteng@imr.ac.cn)
	2022-03-10
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	102 页码:132-136
摘要	The first-order resonant Raman spectra of monolayer MoS2 are calculated under the circularly polarized photoexcitation. The anomalously nonzero Raman intensity of the in-plane E mode under the (Z) over bar(sigma(+)sigma(+))Z or (Z) over bar(sigma(-)sigma(-))Z geometry, which goes against the conventional selection rule, appears under some circum- stances when optical absorption occurs at some special reciprocal points between the zone-center Gamma and the zone-edge-center M points. At that moment, the valley selectivity to the circular polarization is lifted. The analysis shows that the anomalous Raman intensity of the E mode for the same circularly polarized incident and scattered light is consistent with the pseudo-angular-momentum conservation law. The calculated E Raman tensor of monolayer MoS2 is found to vary with laser energy. The two diagonal terms of the Raman tensor change their signs from mutually opposite to the same when the relative intensity of the in-plane E mode to the out-of-plane A(1)' mode increases, indicating the increasingly important role played by the Frolich-type electron-phonon interaction over the deformation potential. Our study may shed new light on the understanding of the novel electron-photon process and assist in the design of new type of optoelectronic devices. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
关键词	First principles calculation Resonant Raman Helicity selection rule MoS2 monolayer
资助者	National Natural Sci-ence Foundation of China ; National Key R&D Program of China
DOI	10.1016/j.jmst.2021.05.080
收录类别	SCI
语种	英语
资助项目	National Natural Sci-ence Foundation of China[52031014] ; National Natural Sci-ence Foundation of China[51702146] ; National Key R&D Program of China[2017YFA0206301]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000778396100007
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/172934
专题	中国科学院金属研究所
通讯作者	Yang, Teng
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Huang, Jianqi,Liu, Zhiyong,Yang, Teng,et al. New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,102:132-136.
APA	Huang, Jianqi,Liu, Zhiyong,Yang, Teng,&Zhang, Zhidong.(2022).New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,102,132-136.
MLA	Huang, Jianqi,et al."New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 102(2022):132-136.