| A silicon-graphene-silicon transistor with an improved current gain | |
| Liu, Chi1; Yang, Xu-Qi1,2; Ma, Wei1,2; Wang, Xin-Zhe1,2; Jiang, Hai-Yan1,2; Ren, Wen-Cai1,2; Sun, Dong-Ming1,2 | |
| Corresponding Author | Sun, Dong-Ming(dmsun@imr.ac.cn) |
| 2022-03-30 | |
| Source Publication | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| ISSN | 1005-0302 |
| Volume | 104Pages:127-130 |
| Abstract | In history, semiconductor-metal-semiconductor transistor (SMST) was proposed for frequency improve-ment. However, a general fabrication method is still missing due to the unsolved technological problem of deposition of a general crystalline semiconductor on metal, and a thinner metal base is also difficult to be fabricated with high quality. Recently, due to the atomic thickness of graphene, the concept of semiconductor-graphene-semiconductor transistor (SGST) has emerged which leads to the renaissance of SMST, however the experimental study is in its infancy. In this letter, SMST and SGST are fabricated using Si membrane transfer. It is found the common base current gain can be improved from about 0.5% in a Si-Au-Si transistor to about 1% in a Si-Gr-Ge one, and to above 10% in a Si-Gr-Si one, which is attributed to both the ultra-thin thickness and the quantum capacitance effect of graphene. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| Keyword | Semiconductor metal semiconductor transistor Graphene base transistor Graphene base heterojunction transistor |
| Funding Organization | National Natural Science Foundation of China ; Chinese Academy of Sciences (SYNL Young Talent Project) |
| DOI | 10.1016/j.jmst.2021.06.061 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; Chinese Academy of Sciences (SYNL Young Talent Project)[SKLA-2019-03] |
| WOS Research Area | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000773043300005 |
| Publisher | JOURNAL MATER SCI TECHNOL |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/172946 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Sun, Dong-Ming |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Liu, Chi,Yang, Xu-Qi,Ma, Wei,et al. A silicon-graphene-silicon transistor with an improved current gain[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,104:127-130. |
| APA | Liu, Chi.,Yang, Xu-Qi.,Ma, Wei.,Wang, Xin-Zhe.,Jiang, Hai-Yan.,...&Sun, Dong-Ming.(2022).A silicon-graphene-silicon transistor with an improved current gain.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,104,127-130. |
| MLA | Liu, Chi,et al."A silicon-graphene-silicon transistor with an improved current gain".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 104(2022):127-130. |
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