Photoirradiation-Induced Capacitance Enhancement in the h-WO3/Bi2WO6 Submicron Rod Heterostructure under Simulated Solar Illumination and Its Postillumination Capacitance Enhancement Retainment from a Photocatalytic Memory Effect

doi:10.1021/acsami.1c17386

IMR OpenIR

	Photoirradiation-Induced Capacitance Enhancement in the h-WO3/Bi2WO6 Submicron Rod Heterostructure under Simulated Solar Illumination and Its Postillumination Capacitance Enhancement Retainment from a Photocatalytic Memory Effect
	Ma, Huiqin 1,2; Yang, Weiyi 3; Gao, Shuang 3; Lin, Zifeng 4; Mo, Zheyang 1,2; Li, Chao 5; Shang, Jian Ku 2; Li, Qi 3
通讯作者	Li, Qi(qiliuiuc@outlook.com)
	2021-12-08
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	13 期号:48 页码:57214-57229
摘要	Recently, photoassisted charging has been demonstrated as a green and sustainable approach to successfully enhance the capacitance of supercapacitors with low cost and good efficiency. However, their light-induced capacitance enhancement is relatively low and is lost quickly when the illumination is off. In this work, a novel active material system is developed for supercapacitors with the photoassisted charging capability by the decoration of a small amount of Bi2WO6 nanoparticles on an h-WO3 submicron rod surface in situ, which forms a typical type II band alignment heterostructure with a close contact interface through the co-sharing of W atoms between h-WO3 submicron rods and Bi2WO6 nanoparticles. The photogenerated charge carrier separation and transfer are largely enhanced in the h-WO3 /Bi2WO6 submicron rod electrode, which subsequently allows more charge carriers to participate in its photoassisted charging process to largely enhance its capacitance improvement under simulated solar illumination than that of the h-WO3 submicron rod electrode. Furthermore, the h-WO3/Bi2WO6 submicron rod electrode could retain its photoinduced capacitance enhancement in the dark for an extended period of time from the photocatalytic memory effect. Thus, our work provides a solution to the two major drawbacks of reported supercapacitors with the light-induced capacitance enhancement property, and supercapacitors based on active materials with the photocatalytic memory effect could be utilized in various technical fields.
关键词	supercapacitors h-WO3 /Bi2WO6 heterojunctions photoinduced capacitance enhancements photocatalytic memory effect postillumination capacitance enhancement retainment
资助者	National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities ; Sichuan Science and Technology Program
DOI	10.1021/acsami.1c17386
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51672283] ; National Natural Science Foundation of China[51602316] ; National Natural Science Foundation of China[51902271] ; Fundamental Research Funds for the Central Universities[2682021CX116] ; Fundamental Research Funds for the Central Universities[2682020CX07] ; Fundamental Research Funds for the Central Universities[2682020CX08] ; Sichuan Science and Technology Program[2020YJ0259] ; Sichuan Science and Technology Program[2020YJ0072] ; Sichuan Science and Technology Program[2021YFH0163]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000752970600042
出版者	AMER CHEMICAL SOC
引用统计	被引频次：22[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/173472
专题	中国科学院金属研究所
通讯作者	Li, Qi
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Southwest Jiaotong Univ, Sch Mat Sci & Engn, Key Lab Adv Technol Mat, Minist Educ, Chengdu 610031, Peoples R China 4.Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610041, Peoples R China 5.Shandong Univ Technol, Sch Mat Sci & Engn, Zibo 255000, Peoples R China
推荐引用方式 GB/T 7714	Ma, Huiqin,Yang, Weiyi,Gao, Shuang,et al. Photoirradiation-Induced Capacitance Enhancement in the h-WO3/Bi2WO6 Submicron Rod Heterostructure under Simulated Solar Illumination and Its Postillumination Capacitance Enhancement Retainment from a Photocatalytic Memory Effect[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13(48):57214-57229.
APA	Ma, Huiqin.,Yang, Weiyi.,Gao, Shuang.,Lin, Zifeng.,Mo, Zheyang.,...&Li, Qi.(2021).Photoirradiation-Induced Capacitance Enhancement in the h-WO3/Bi2WO6 Submicron Rod Heterostructure under Simulated Solar Illumination and Its Postillumination Capacitance Enhancement Retainment from a Photocatalytic Memory Effect.ACS APPLIED MATERIALS & INTERFACES,13(48),57214-57229.
MLA	Ma, Huiqin,et al."Photoirradiation-Induced Capacitance Enhancement in the h-WO3/Bi2WO6 Submicron Rod Heterostructure under Simulated Solar Illumination and Its Postillumination Capacitance Enhancement Retainment from a Photocatalytic Memory Effect".ACS APPLIED MATERIALS & INTERFACES 13.48(2021):57214-57229.