Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures | |
Tan, Junyang1,2; Li, Shisheng3; Liu, Bilu1,2; Cheng, Hui-Ming1,2,4 | |
Corresponding Author | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn) |
2021 | |
Source Publication | SMALL STRUCTURES
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Volume | 2Issue:1Pages:20 |
Abstract | Two-dimensional (2D) materials' family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or homostructures in the fashion of out-of-plane perpendicular stacking or in-plane lateral stitching, resulting in unexpected physical and chemical properties and applications in many areas. In particular, 2D metal-semiconductor heterostructures or homostructures (MSHSs) which integrate 2D metals and 2D semiconductors, have shown great promise in future integrated electronics and energy-related applications. Herein, MSHSs with different structures and dimensionalities are first introduced, followed by several ways for their preparation. Their applications in electronics and optoelectronics, energy storage and conversion, and their use as platforms to exploit new physics are then discussed. Finally, the perspectives about the challenges and future research directions in this emerging field are given. |
Keyword | 2D materials electronics energy metal-semiconductor heterostructures preparation structures |
Funding Organization | National Natural Science Foundation of China ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen |
DOI | 10.1002/sstr.202000093 |
Indexed By | SCI |
Language | 英语 |
Funding Project | National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] |
WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science |
WOS Subject | Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS ID | WOS:000736588600012 |
Publisher | WILEY |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/173839 |
Collection | 中国科学院金属研究所 |
Corresponding Author | Liu, Bilu; Cheng, Hui-Ming |
Affiliation | 1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 3.Natl Inst Mat Sci, Int Ctr Young Scientists, Tsukuba, Ibaraki 3050044, Japan 4.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China |
Recommended Citation GB/T 7714 | Tan, Junyang,Li, Shisheng,Liu, Bilu,et al. Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures[J]. SMALL STRUCTURES,2021,2(1):20. |
APA | Tan, Junyang,Li, Shisheng,Liu, Bilu,&Cheng, Hui-Ming.(2021).Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures.SMALL STRUCTURES,2(1),20. |
MLA | Tan, Junyang,et al."Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures".SMALL STRUCTURES 2.1(2021):20. |
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