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Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures
Tan, Junyang1,2; Li, Shisheng3; Liu, Bilu1,2; Cheng, Hui-Ming1,2,4
Corresponding AuthorLiu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
2021
Source PublicationSMALL STRUCTURES
Volume2Issue:1Pages:20
AbstractTwo-dimensional (2D) materials' family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or homostructures in the fashion of out-of-plane perpendicular stacking or in-plane lateral stitching, resulting in unexpected physical and chemical properties and applications in many areas. In particular, 2D metal-semiconductor heterostructures or homostructures (MSHSs) which integrate 2D metals and 2D semiconductors, have shown great promise in future integrated electronics and energy-related applications. Herein, MSHSs with different structures and dimensionalities are first introduced, followed by several ways for their preparation. Their applications in electronics and optoelectronics, energy storage and conversion, and their use as platforms to exploit new physics are then discussed. Finally, the perspectives about the challenges and future research directions in this emerging field are given.
Keyword2D materials electronics energy metal-semiconductor heterostructures preparation structures
Funding OrganizationNational Natural Science Foundation of China ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen
DOI10.1002/sstr.202000093
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523]
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000736588600012
PublisherWILEY
Citation statistics
Cited Times:35[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/173839
Collection中国科学院金属研究所
Corresponding AuthorLiu, Bilu; Cheng, Hui-Ming
Affiliation1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
3.Natl Inst Mat Sci, Int Ctr Young Scientists, Tsukuba, Ibaraki 3050044, Japan
4.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Tan, Junyang,Li, Shisheng,Liu, Bilu,et al. Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures[J]. SMALL STRUCTURES,2021,2(1):20.
APA Tan, Junyang,Li, Shisheng,Liu, Bilu,&Cheng, Hui-Ming.(2021).Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures.SMALL STRUCTURES,2(1),20.
MLA Tan, Junyang,et al."Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures".SMALL STRUCTURES 2.1(2021):20.
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