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Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer
Wei, Yu-Ning1,2; Hu, Xian-Gang1,2; Zhang, Jian-Wei3; Tong, Bo1,2; Du, Jin-Hong1,2; Liu, Chang1,2; Sun, Dong-Ming1,2; Liu, Chi1,2
Corresponding AuthorSun, Dong-Ming(dmsun@imr.ac.cn) ; Liu, Chi(chiliu@imr.ac.cn)
2022-05-13
Source PublicationSMALL
ISSN1613-6810
Pages7
AbstractGermanium (Ge)-based devices are recognized as one of the most promising next-generation technologies for extending Moore's law. However, one of the critical issues is Fermi-level pinning (FLP) at the metal/n-Ge interface, and the resulting large contact resistance seriously degrades their performance. The insertion of a thin layer is one main technique for FLP modulation; however, the contact resistance is still limited by the remaining barrier height and the resistance induced by the insertion layer. In addition, the proposed depinning mechanisms are also controversial. Here, the authors report a wafer-scale carbon nanotube (CNT) insertion method to alleviate FLP. The inserted conductive film reduces the effective Schottky barrier height without inducing a large resistance, leading to ohmic contact and the smallest contact resistance between a metal and a lightly doped n-Ge. These devices also indicate that the metal-induced gap states mechanism is responsible for the pinning. Based on the proposed technology, a wafer-scale planar diode array is fabricated at room temperature without using the traditional ion-implantation and annealing technology, achieving an on-to-off current ratio of 4.59 x 10(4). This work provides a new way of FLP modulation that helps to improve device performance with new materials.
Keywordcarbon nanotube films Fermi-level pinning germanium metal-induced gap states ohmic contacts
Funding OrganizationNational Natural Science Foundation of China ; Chinese Academy of Sciences
DOI10.1002/smll.202201840
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[51625203] ; Chinese Academy of Sciences[SYNL2020] ; Chinese Academy of Sciences[SKLA-2019-03]
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000794260000001
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/173918
Collection中国科学院金属研究所
Corresponding AuthorSun, Dong-Ming; Liu, Chi
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dong Nanhu Rd, Changchun 130033, Peoples R China
Recommended Citation
GB/T 7714
Wei, Yu-Ning,Hu, Xian-Gang,Zhang, Jian-Wei,et al. Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer[J]. SMALL,2022:7.
APA Wei, Yu-Ning.,Hu, Xian-Gang.,Zhang, Jian-Wei.,Tong, Bo.,Du, Jin-Hong.,...&Liu, Chi.(2022).Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer.SMALL,7.
MLA Wei, Yu-Ning,et al."Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer".SMALL (2022):7.
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