Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer | |
Wei, Yu-Ning1,2; Hu, Xian-Gang1,2; Zhang, Jian-Wei3; Tong, Bo1,2; Du, Jin-Hong1,2; Liu, Chang1,2; Sun, Dong-Ming1,2; Liu, Chi1,2 | |
Corresponding Author | Sun, Dong-Ming(dmsun@imr.ac.cn) ; Liu, Chi(chiliu@imr.ac.cn) |
2022-05-13 | |
Source Publication | SMALL
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ISSN | 1613-6810 |
Pages | 7 |
Abstract | Germanium (Ge)-based devices are recognized as one of the most promising next-generation technologies for extending Moore's law. However, one of the critical issues is Fermi-level pinning (FLP) at the metal/n-Ge interface, and the resulting large contact resistance seriously degrades their performance. The insertion of a thin layer is one main technique for FLP modulation; however, the contact resistance is still limited by the remaining barrier height and the resistance induced by the insertion layer. In addition, the proposed depinning mechanisms are also controversial. Here, the authors report a wafer-scale carbon nanotube (CNT) insertion method to alleviate FLP. The inserted conductive film reduces the effective Schottky barrier height without inducing a large resistance, leading to ohmic contact and the smallest contact resistance between a metal and a lightly doped n-Ge. These devices also indicate that the metal-induced gap states mechanism is responsible for the pinning. Based on the proposed technology, a wafer-scale planar diode array is fabricated at room temperature without using the traditional ion-implantation and annealing technology, achieving an on-to-off current ratio of 4.59 x 10(4). This work provides a new way of FLP modulation that helps to improve device performance with new materials. |
Keyword | carbon nanotube films Fermi-level pinning germanium metal-induced gap states ohmic contacts |
Funding Organization | National Natural Science Foundation of China ; Chinese Academy of Sciences |
DOI | 10.1002/smll.202201840 |
Indexed By | SCI |
Language | 英语 |
Funding Project | National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[51625203] ; Chinese Academy of Sciences[SYNL2020] ; Chinese Academy of Sciences[SKLA-2019-03] |
WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
WOS ID | WOS:000794260000001 |
Publisher | WILEY-V C H VERLAG GMBH |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/173918 |
Collection | 中国科学院金属研究所 |
Corresponding Author | Sun, Dong-Ming; Liu, Chi |
Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dong Nanhu Rd, Changchun 130033, Peoples R China |
Recommended Citation GB/T 7714 | Wei, Yu-Ning,Hu, Xian-Gang,Zhang, Jian-Wei,et al. Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer[J]. SMALL,2022:7. |
APA | Wei, Yu-Ning.,Hu, Xian-Gang.,Zhang, Jian-Wei.,Tong, Bo.,Du, Jin-Hong.,...&Liu, Chi.(2022).Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer.SMALL,7. |
MLA | Wei, Yu-Ning,et al."Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer".SMALL (2022):7. |
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