| A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction | |
| Wang, Yaning1,2; Li, Wanying1,2; Guo, Yimeng1,2; Huang, Xin3; Luo, Zhaoping1,2; Wu, Shuhao4; Wang, Hai4; Chen, Jiezhi4; Li, Xiuyan1,2; Zhan, Xuepeng4; Wang, Hanwen1,2 | |
| Corresponding Author | Li, Xiuyan(xyli@imr.ac.cn) ; Zhan, Xuepeng(zhanxuepeng@sdu.edu.cn) ; Wang, Hanwen(hwwang15s@imr.ac.cn) |
| 2022-11-20 | |
| Source Publication | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| ISSN | 1005-0302 |
| Volume | 128Pages:239-244 |
| Abstract | Memtransistor, a multi-terminal device that combines both the characteristics of a memristor and a transistor, has been intensively studied in two-dimensional layered materials (2DLM), which show potential for applications in such as neuromorphic computation. However, while often based on the migration of ions or atomic defects in the conduction channels, performances of memtransistors suffer from the poor reliability and tunability. Furthermore, those known 2DLM-based memtransistors are mostly constructed in a lateral manner, which hinders the further increasing of the transistor densities per area. Until now, fabricating non-atomic-diffusion based memtransistors with vertical structure remains challenging. Here, we demonstrate a vertically-integrated ferroelectric memristor by hetero-integrating the 2D ferroelectric materials CuInP2S6 (CIPS) into a graphite/CuInP2S6/MoS2 vertical heterostructure. Memristive behaviour and multi-level resistance states were realized. Essential synaptic behaviours including excitatory postsynaptic current, paired-pulse-facilitation, and spike-amplitude-dependent plasticity are successfully mimicked. Moreover, by applying a gate potential, the memristive behaviour and synaptic features can be effectively gate tuned. Our findings pave the way for the realization of novel gate-tunable ferroelectric synaptic devices with the capability to perform complex neural functions. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| Keyword | van der Waals heterostructures Ferroelectrics Memristor Artificial synapse Neuromorphic computing |
| Funding Organization | National Natural Science Foundation of China (NSFC) ; China Postdoctoral Science Foundation ; Young Scholars Program of Shandong University |
| DOI | 10.1016/j.jmst.2022.04.021 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China (NSFC)[12104462] ; National Natural Science Foundation of China (NSFC)[62104134] ; China Postdoctoral Science Foundation[2021M700154] ; Young Scholars Program of Shandong University |
| WOS Research Area | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000810873900004 |
| Publisher | JOURNAL MATER SCI TECHNOL |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/174441 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Li, Xiuyan; Zhan, Xuepeng; Wang, Hanwen |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Aalto Univ, Dept Appl Phys, Aalto, Finland 4.Shandong Univ, Sch Informat Sci & Engn ISE, Qingdao 266237, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, Yaning,Li, Wanying,Guo, Yimeng,et al. A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,128:239-244. |
| APA | Wang, Yaning.,Li, Wanying.,Guo, Yimeng.,Huang, Xin.,Luo, Zhaoping.,...&Wang, Hanwen.(2022).A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,128,239-244. |
| MLA | Wang, Yaning,et al."A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 128(2022):239-244. |
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