| Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory | |
| Zhang, Rongjie1,2; Lai, Yongjue1,2; Chen, Wenjun1,2; Teng, Changjiu1,2; Sun, Yujie1,2; Yang, Liusi1,2; Wang, Jingyun1,2; Liu, Bilu1,2; Cheng, Hui-Ming1,2,3,4 | |
| Corresponding Author | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn) |
| 2022-04-26 | |
| Source Publication | ACS NANO
 |
| ISSN | 1936-0851 |
| Volume | 16Issue:4Pages:6309-6316 |
| Abstract | Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers. Memory devices based on wrinkled monolayer MoS2 show multilevel storage capability, an on/off ratio of 106, and a retention time of >104 s, as well as tunable linear and exponential behaviors at the stimulation of different gate voltages. We also reveal an interesting wrinkle-based carrier trapping mechanism by using conductive atomic force microscopy. This work offers a configuration to control carriers in ultrathin memory devices and for in-memory calculations. |
| Keyword | 2D materials monolayer MoS 2 wrinkles memory carrier trapping conductive AFM |
| Funding Organization | National Natural Science Foundation of China ; National Science Fund for Distinguished Young Scholars ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Program |
| DOI | 10.1021/acsnano.2c00350 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[52188101] ; National Science Fund for Distinguished Young Scholars[52125309] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Program[JCYJ20200109144616617] |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS ID | WOS:000813154800001 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/174703 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Liu, Bilu; Cheng, Hui-Ming |
| Affiliation | 1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Shenzhen Int Grad Sch, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Inst Mat Res, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Chinese Acad Sci, Fac Mat & Engn, Shenzhen Inst Adv Technol, Inst Technol Carbon Neutral, Shenzhen 518055, Peoples R China |
| Recommended Citation GB/T 7714 | Zhang, Rongjie,Lai, Yongjue,Chen, Wenjun,et al. Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory[J]. ACS NANO,2022,16(4):6309-6316. |
| APA | Zhang, Rongjie.,Lai, Yongjue.,Chen, Wenjun.,Teng, Changjiu.,Sun, Yujie.,...&Cheng, Hui-Ming.(2022).Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory.ACS NANO,16(4),6309-6316. |
| MLA | Zhang, Rongjie,et al."Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory".ACS NANO 16.4(2022):6309-6316. |
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