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原位生长晶须氮化硅陶瓷基复合材料
陈声崎
学位类型硕士
导师夏非
1990
学位授予单位中国科学院金属研究所
学位授予地点中国科学院金属研究所
摘要本文采用原位生长晶须的方法,通过对原位生长晶须氮化硅陶瓷复合材料制备工艺的研究,分别制备出α-Si_3N_4(w)/RBSN、β-SiC(w)/RBSN、β-Si_3N_4(w)/Si_3N_4、β-SiC(w)/Si_3N_4复合材料,利用TEM、SEM对各种晶须的显微结构进行分析和观察,发现晶须存在不同生长方向和晶体缺陷。运用X-射线衍射对各种晶须和生成物进行了分析,同时测量了β-Si_3N_4(w)/Si_3N_4、β-SiC(w)/Si_3N_4材料的力学性能,并对其增韧机制进行了探讨。为了保证生成晶须的稳定性,本文对生成晶须的动力学、热力学过程进行了探讨,同时为了制备致密的氮化硅基体材料,对氮化机制进行了讨论,并对昌须生长机制和生长条件进行研究。实验结果表明,原位生长晶须方法有效地解决了晶须的基体材料中分布不均匀的问题,同时避免了在机械混合过程中晶须的损伤和化学腐蚀,同时避免了在机械混合过程中晶须的损伤和化学腐蚀,简化了晶须复合陶瓷工艺,对晶须复合陶瓷材料是一种行之有效的方法。
其他摘要By in suit whisker formation, α-Si_3N_4(w)/RBSN, β-SiC(w)/RBSN, β-Si_3N_4(w)/Si_3N_4 and β-SiC(w)/Si_3N_4, composites were prepared. The microstructure of the different whiskers was observed and analysed by using TEM and SEM. It was shown that different whiskers have different crystallographic reactions of whisker growth and different type of crystal defeats. Phase composition of the whiskers and the composites were determiend by X-ray diffraction. The mechanical properities of β-Si_3N_4(w)/Si_3N_4, and β-SiC(w)/Si_3N_4 have been measured and its toughening mechanism was disscussed. In order to keep the stability of the whiskers, the kinetics and thermodynamics of in situ whisker formation was investigated. To produce the dense silicon nitride matrix, the nitriding mechenism have been discussed. The growth mechenisms and conditions of the whiskers were investigated. It was shown that the problems of nonhomogenous dispossion of whisker in matrix was solved effectively. The whiskers were kept away from mechanical damage during mixing and chemical corrsion. The simplified process technology of ceramic compsites may be a very useful method.
页数54
语种中文
文献类型学位论文
条目标识符http://ir.imr.ac.cn/handle/321006/17472
专题中国科学院金属研究所
推荐引用方式
GB/T 7714
陈声崎. 原位生长晶须氮化硅陶瓷基复合材料[D]. 中国科学院金属研究所. 中国科学院金属研究所,1990.
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