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Engineering Graphene Grain Boundaries for Plasmonic Multi-Excitation and Hotspots
Ma, Teng1; Yao, Baicheng2; Zheng, Zebo3; Liu, Zhibo1; Ma, Wei1,4; Chen, Maolin1,4; Chen, Huanjun3; Deng, Shaozhi3; Xu, Ningsheng3; Bao, Qiaoliang5,6; Sun, Dong-Ming1,4; Cheng, Hui-Ming1,7; Ren, Wencai1,4
Corresponding AuthorRen, Wencai(wcren@imr.ac.cn)
2022-06-28
Source PublicationACS NANO
ISSN1936-0851
Volume16Issue:6Pages:9041-9048
AbstractSurface plasmons, merging photonics and electronics in nanoscale dimensions, have been the cornerstones in integrated informatics, precision detection, high-resolution imaging, and energy conversion. Arising from the exceptional Fermi-Dirac tunability, ultrafast carrier mobility, and high-field confinement, graphene offers excellent advantages for plasmon technologies and enables a variety of state-of-theart optoelectronic applications ranging from tight-field-enhanced light sources, modulators, and photodetectors to biochemical sensors. However, it is challenging to co-excite multiple graphene plasmons on one single graphene sheet with high density, a key step toward plasmonic wavelength-division multiplexing and next-generation dynamical optoelectronics. Here, we report the heteroepitaxial growth of a polycrystalline graphene monolayer with patterned gradient grain boundary density, which is synthesized by creating diverse nanosized local growth environments on a centimeter-scale substrate with a polycrystalline graphene ring seed in chemical vapor deposition. Such geometry enables plasmonic co-excitation with varied wavelength diversification in the nanoscale. Via using high-resolution scanning near-field optical microscopy, we demonstrate rich plasmon standing waves, even bright plasmonic hotspots with a size up to 3 mu m. Moreover, by changing the grain boundary density and annealing, we find the local plasmonic wavelengths are widely tunable, from 70 to 300 nm. Theoretical modeling supports that such plasmonic versatility is due to the grain boundary-induced plasmon-phonon interactions through random phase approximation. The seed-induced heteroepitaxial growth provides a promising way for the grain boundary engineering of two-dimensional materials, and the controllable grain boundary-based plasmon co-generation and manipulation in one single graphene monolayer will facilitate the applications of graphene for plasmonics and nanophotonics.
Keywordgraphene chemical vapor deposition grain boundary plasmonics co-excitation hotspots
Funding OrganizationNational Science Foundation of China ; Chinese Academy of Sciences ; LiaoNing Revitalization Talents Program ; Guangdong Basic and Applied Basic Research Foundation
DOI10.1021/acsnano.2c00396
Indexed BySCI
Language英语
Funding ProjectNational Science Foundation of China[51325205] ; National Science Foundation of China[51290273] ; National Science Foundation of China[52188101] ; National Science Foundation of China[51521091] ; National Science Foundation of China[61975025] ; National Science Foundation of China[U2130106] ; National Science Foundation of China[6197030991] ; Chinese Academy of Sciences[XDB30000000] ; Chinese Academy of Sciences[ZDBS-LYJSC027] ; LiaoNing Revitalization Talents Program[XLYC1808013] ; Guangdong Basic and Applied Basic Research Foundation[2020B0301030002]
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000820329100001
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/174835
Collection中国科学院金属研究所
Corresponding AuthorRen, Wencai
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Elect Sci & Technol China, Educ Minist China, Key Lab Opt Fiber Sensing & Commun, Chengdu 611731, Peoples R China
3.Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
5.Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China
6.Monash Univ, Dept Mat Sci & Engn, Clayton, Vic 3800, Australia
7.Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
Recommended Citation
GB/T 7714
Ma, Teng,Yao, Baicheng,Zheng, Zebo,et al. Engineering Graphene Grain Boundaries for Plasmonic Multi-Excitation and Hotspots[J]. ACS NANO,2022,16(6):9041-9048.
APA Ma, Teng.,Yao, Baicheng.,Zheng, Zebo.,Liu, Zhibo.,Ma, Wei.,...&Ren, Wencai.(2022).Engineering Graphene Grain Boundaries for Plasmonic Multi-Excitation and Hotspots.ACS NANO,16(6),9041-9048.
MLA Ma, Teng,et al."Engineering Graphene Grain Boundaries for Plasmonic Multi-Excitation and Hotspots".ACS NANO 16.6(2022):9041-9048.
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