| Topological hall transport: Materials, mechanisms and potential applications | |
| Wang, Han1,2; Dai, Yingying2; Chow, Gan-Moog1; Chen, Jingsheng1 | |
| Corresponding Author | Chen, Jingsheng(msecj@nus.edu.sg) |
| 2022-10-01 | |
| Source Publication | PROGRESS IN MATERIALS SCIENCE
 |
| ISSN | 0079-6425 |
| Volume | 130Pages:47 |
| Abstract | Topological Hall effect (THE) and its inverse effect (skyrmion Hall effect) generally occurs in magnetic materials with topological properties, as a consequence of nonuniform and noncollinear magnetization as well as special chirality. Its mechanism and properties are different from those of conventional anomalous Hall effect induced by uniform magnetization. Following the seminal theoretical model of THE, the experimental research of THE has achieved the significant progress in the development of magnetic topological state (magnetic vortex, meron, skyrmion) and spintronics in the past decade. In this topical review, we focus on the recent experimental progress in the observation of THE and various theoretical understandings. The first part introduces the phenomenological description of THE commonly observed in experiments. Next, we present a survey of different materials hosting THE and summarize the relevant theories of THE as well as the approach of tuning THE. Finally, we will conclude our review by summarizing the present status and the perspective of the field. |
| Keyword | Topological Hall effect Topological states Magnetic skyrmion Dzyaloshinskii -Moriya interaction Inversion symmetry breaking Magnetic multilayers |
| Funding Organization | A*STAR ; RIE2020 Advanced Manufacturing and Engineering (AME) ; Singapore Ministry of Education ; National Natural Science Foundation of China ; Young Talent Program of SYNL |
| DOI | 10.1016/j.pmatsci.2022.100971 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | A*STAR[A1983c0036] ; A*STAR[IAF-ICP 11801E0036] ; RIE2020 Advanced Manufacturing and Engineering (AME)[A20G9b0135] ; Singapore Ministry of Education[MOE2018-T2-2-043] ; Singapore Ministry of Education[MOE-T2EP50121-0011] ; Singapore Ministry of Education[MOE Tier 1 22-4888-A0001] ; National Natural Science Foundation of China[51590883] ; National Natural Science Foundation of China[51701217] ; Young Talent Program of SYNL |
| WOS Research Area | Materials Science |
| WOS Subject | Materials Science, Multidisciplinary |
| WOS ID | WOS:000815774200001 |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/174935 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Chen, Jingsheng |
| Affiliation | 1.Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, Han,Dai, Yingying,Chow, Gan-Moog,et al. Topological hall transport: Materials, mechanisms and potential applications[J]. PROGRESS IN MATERIALS SCIENCE,2022,130:47. |
| APA | Wang, Han,Dai, Yingying,Chow, Gan-Moog,&Chen, Jingsheng.(2022).Topological hall transport: Materials, mechanisms and potential applications.PROGRESS IN MATERIALS SCIENCE,130,47. |
| MLA | Wang, Han,et al."Topological hall transport: Materials, mechanisms and potential applications".PROGRESS IN MATERIALS SCIENCE 130(2022):47. |
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