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Topological hall transport: Materials, mechanisms and potential applications
Wang, Han1,2; Dai, Yingying2; Chow, Gan-Moog1; Chen, Jingsheng1
通讯作者Chen, Jingsheng(msecj@nus.edu.sg)
2022-10-01
发表期刊PROGRESS IN MATERIALS SCIENCE
ISSN0079-6425
卷号130页码:47
摘要Topological Hall effect (THE) and its inverse effect (skyrmion Hall effect) generally occurs in magnetic materials with topological properties, as a consequence of nonuniform and noncollinear magnetization as well as special chirality. Its mechanism and properties are different from those of conventional anomalous Hall effect induced by uniform magnetization. Following the seminal theoretical model of THE, the experimental research of THE has achieved the significant progress in the development of magnetic topological state (magnetic vortex, meron, skyrmion) and spintronics in the past decade. In this topical review, we focus on the recent experimental progress in the observation of THE and various theoretical understandings. The first part introduces the phenomenological description of THE commonly observed in experiments. Next, we present a survey of different materials hosting THE and summarize the relevant theories of THE as well as the approach of tuning THE. Finally, we will conclude our review by summarizing the present status and the perspective of the field.
关键词Topological Hall effect Topological states Magnetic skyrmion Dzyaloshinskii -Moriya interaction Inversion symmetry breaking Magnetic multilayers
资助者A*STAR ; RIE2020 Advanced Manufacturing and Engineering (AME) ; Singapore Ministry of Education ; National Natural Science Foundation of China ; Young Talent Program of SYNL
DOI10.1016/j.pmatsci.2022.100971
收录类别SCI
语种英语
资助项目A*STAR[A1983c0036] ; A*STAR[IAF-ICP 11801E0036] ; RIE2020 Advanced Manufacturing and Engineering (AME)[A20G9b0135] ; Singapore Ministry of Education[MOE2018-T2-2-043] ; Singapore Ministry of Education[MOE-T2EP50121-0011] ; Singapore Ministry of Education[MOE Tier 1 22-4888-A0001] ; National Natural Science Foundation of China[51590883] ; National Natural Science Foundation of China[51701217] ; Young Talent Program of SYNL
WOS研究方向Materials Science
WOS类目Materials Science, Multidisciplinary
WOS记录号WOS:000815774200001
出版者PERGAMON-ELSEVIER SCIENCE LTD
引用统计
被引频次:33[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/174935
专题中国科学院金属研究所
通讯作者Chen, Jingsheng
作者单位1.Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
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Wang, Han,Dai, Yingying,Chow, Gan-Moog,et al. Topological hall transport: Materials, mechanisms and potential applications[J]. PROGRESS IN MATERIALS SCIENCE,2022,130:47.
APA Wang, Han,Dai, Yingying,Chow, Gan-Moog,&Chen, Jingsheng.(2022).Topological hall transport: Materials, mechanisms and potential applications.PROGRESS IN MATERIALS SCIENCE,130,47.
MLA Wang, Han,et al."Topological hall transport: Materials, mechanisms and potential applications".PROGRESS IN MATERIALS SCIENCE 130(2022):47.
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