Two-dimensional superconducting MoSi2N4(MoN)(4n) homologous compounds

doi:10.1093/nsr/nwac273

IMR OpenIR

	Two-dimensional superconducting MoSi2N4(MoN)(4n) homologous compounds
	Liu, Zhibo 1,2; Wang, Lei 1,2; Hong, Yi-Lun 1,2; Chen, Xing-Qiu 1,2; Cheng, Hui-Ming 1,2,3; Ren, Wencai 1,2
通讯作者	Ren, Wencai(wcren@imr.ac.cn)
	2022-11-28
发表期刊	NATIONAL SCIENCE REVIEW
ISSN	2095-5138
页码	8
摘要	We discovered superconducting homologous compounds of 2D MoSi2N4, MoSi2N4(MoN)(4n), which provides a new strategy to tailor the structure and properties of 2D materials by phase homology. The number and stacking order of layers are two important degrees of freedom that can modulate the properties of 2D van der Waals (vdW) materials. However, the layers' structures are essentially limited to the known layered 3D vdW materials. Recently, a new 2D vdW material, MoSi2N4, without known 3D counterparts, was synthesized by passivating the surface dangling bonds of non-layered 2D molybdenum nitride with elemental silicon, whose monolayer can be viewed as a monolayer MoN (-N-Mo-N-) sandwiched between two Si-N layers. This unique sandwich structure endows the MoSi2N4 monolayer with many fascinating properties and intriguing applications, and the surface-passivating growth method creates the possibility of tuning the layer's structure of 2D vdW materials. Here we synthesized a series of MoSi2N4(MoN)(4n) structures confined in the matrix of multilayer MoSi2N4. These super-thick monolayers are the homologous compounds of MoSi2N4, which can be viewed as multilayer MoN (Mo4n+1N4n+2) sandwiched between two Si-N layers. First-principles calculations show that MoSi2N4(MoN)(4) monolayers have much higher Young's modulus than MoN, which is attributed to the strong Si-N bonds on the surface. Importantly, different from the semiconducting nature of the MoSi2N4 monolayer, the MoSi2N4(MoN)(4) monolayer is identified as a superconductor with a transition temperature of 9.02 K. The discovery of MoSi2N4(MoN)(4n) structures not only expands the family of 2D materials but also brings a new degree of freedom to tailor the structure of 2D vdW materials, which may lead to unexpected novel properties and applications.
关键词	MoSi2N4 2D layered materials homologous compounds iDPC-STEM superconductivity
DOI	10.1093/nsr/nwac273
收录类别	SCI
语种	英语
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000912718200001
出版者	OXFORD UNIV PRESS
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/175379
专题	中国科学院金属研究所
通讯作者	Ren, Wencai
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Liu, Zhibo,Wang, Lei,Hong, Yi-Lun,et al. Two-dimensional superconducting MoSi2N4(MoN)(4n) homologous compounds[J]. NATIONAL SCIENCE REVIEW,2022:8.
APA	Liu, Zhibo,Wang, Lei,Hong, Yi-Lun,Chen, Xing-Qiu,Cheng, Hui-Ming,&Ren, Wencai.(2022).Two-dimensional superconducting MoSi2N4(MoN)(4n) homologous compounds.NATIONAL SCIENCE REVIEW,8.
MLA	Liu, Zhibo,et al."Two-dimensional superconducting MoSi2N4(MoN)(4n) homologous compounds".NATIONAL SCIENCE REVIEW (2022):8.