Phototransistors Based on hBN-Encapsulated NiPS3

doi:10.3390/magnetochemistry8090101

IMR OpenIR

	Phototransistors Based on hBN-Encapsulated NiPS3
	Liu, Yingjia 1,2; Sun, Xingdan 1,2
通讯作者	Sun, Xingdan(xdsun15s@imr.ac.cn)
	2022-09-01
发表期刊	MAGNETOCHEMISTRY
卷号	8 期号:9 页码:8
摘要	Transition metal phosphorous trichalcogenides (MPX3) have been extensively investigated as photodetectors due to their wide-bandgap semiconductor properties. However, the research involved in the photoresponses at low temperatures remain blank. Here, hexagonal boron nitride (hBN)-encapsulated NiPS3 field effect transistors were fabricated by using the dry-transfer technique, indicating strong stability under atmospheric environments. The NiPS3 devices with the thickness of 10.4 nm, showed broad photoresponses from near-infrared to ultraviolet radiation at the liquid nitrogen temperature, and the minimum of rise time can reach 30 ms under the wavelength of 405 nm. The mechanism of temperature-dependent photoresponses can be deduced by competition between Schottky barrier height and thermal fluctuation. Our findings provide insights into superior phototransistors in few-layered NiPS3 for ultrasensitive light detection.
关键词	two-dimensional materials NiPS3 vdWs heterojunction phototransistor Schottky barrier
资助者	National Natural Science Foundation of China (NSFC)
DOI	10.3390/magnetochemistry8090101
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[12204490]
WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Inorganic & Nuclear ; Chemistry, Physical ; Materials Science, Multidisciplinary
WOS记录号	WOS:000858796000001
出版者	MDPI
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/175655
专题	中国科学院金属研究所
通讯作者	Sun, Xingdan
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China
推荐引用方式 GB/T 7714	Liu, Yingjia,Sun, Xingdan. Phototransistors Based on hBN-Encapsulated NiPS3[J]. MAGNETOCHEMISTRY,2022,8(9):8.
APA	Liu, Yingjia,&Sun, Xingdan.(2022).Phototransistors Based on hBN-Encapsulated NiPS3.MAGNETOCHEMISTRY,8(9),8.
MLA	Liu, Yingjia,et al."Phototransistors Based on hBN-Encapsulated NiPS3".MAGNETOCHEMISTRY 8.9(2022):8.