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用K_2ZrF_6 助浸法制造SiC涂层C/Al复合材料及其材料界面
陈新国
学位类型硕士
导师沈祖洪
1992
学位授予单位中国科学院金属研究所
学位授予地点中国科学院金属研究所
摘要本文研究了用 K_2ZrF_6 助浸法制造SiC涂层碳纤维增强Al基复合材料的工艺,并深入研究了热处理、基体的合金化对材料性能的影响,对各种复合材料的界面也作了详细的考察。实验表明,SiC涂层后,用 K_2ZrF_6 处理法能制得性能良好的复合丝及完全浸渍的复合材料。热处理通过增强界面结合强度而改变复合丝性能,适当的热处理后获得的复合丝最高强度为1450MPa (91% ROM值)。600 ℃以下热处理时C/Al界面较为稳定,但650 ℃时的热处理界面反应加剧,界面上的Si向基体中扩散。对基体的Si合金化研究表明,Si能抑制涂层与SiC涂层与Al之间的反应。但这一机理与经典的“Al-Si-SiC 体系中因Si饱和而抑制反应”的理论不同。当上述体中有Zr存在时,Si优先与SiC化学亲和性较高的Zr反应,形成金属间化全物(Zr_3Al_4Si_5),余下的Si再在 Al-Si-SiC体系中建立平衡。Si的合金化还发现,制造复合丝时当所用合金中的Si含量超过5wt% 时,复合丝基体中的Si含量比合金中的Si含量低。Si在纤维周围偏聚,并在复合丝基体中有一个径向径向浓度梯度。由此提出了复合丝制造过程中Si的扩散模型。认为,基体中降Si是因为偏聚在纤维周围的Si形成了一个浓度势垒,阻止Si由熔体向纤维束中心扩散。合金中高的Si含量还降低了它的浸渍性能,尤其是对纤维预制件的浸渍性。通过透射电镜对复合材料界面分析表明,无涂层纤维的界面反应很严重。当合金中Si含量低于2wt% 时,SiC涂层被反应了。在SiC涂层的CF/Al-12wt%/Si的复合材料中没有发现界面反应。在界面附近发现了两种Si的析出模式,即在界面的邻近基体中固溶的Si麻点状析出模式及界面上单晶 Si 的析出模式。高Si含量的基体中没有发现其他形试纯Si存在。在SiC涂层的CF/Al-12wt%/Si复合材料界面上还发现有 (Zr_3Al_4Si_5) 这一物质析出。在纯Al及Al-2wt%/Si为基体的复合材料中,基体中的Zr都以Al_2Zr的形式存在。当基体中加入更多的Si时,Zr的存在形式向(Zr_3Al_4Si_5)转变。
其他摘要In this thesis, the processing technique of SiC coated carbon fibers reinforced aluminium by using of K_2ZrF_6 as wetting promotion agent is investigated. The effects of heat treatment, silicon alloying of the matrix on the composite properties and the composite interfaces are also studied. It is proved that good precursor wires and fully infiltrated composite can be made by treating of SiC coated carbon fibers with K_2ZrF_6. The tensile strengths of the precursor wires are changed because of the enhanced interfacial bonding strength by heat-treatment. The highest tensile strength of the precursor wires reachs 1450MPa (91% ROM value) after the proper heat-treatment. The interface is stable when heat-treated below 600℃. But the C/Al interfacial reaction is activated and silicon diffuses from interface to matrix at 650℃. It is also proved that alloying the matrix with silicon can suppress the interfacial reaction between SiC coating and aluminium. But the suppression mechanism is different from the classical theory, which is considered to be 'the contribution of statured silicon in the Al-Si-SiC system'. When zirconium exists in this system,. which is chemical affinity with SiC, silicon preferably reacts with zirconium and forms intermetallic (Zr_3Al_4Si_5). Then the surplus silicon constructs the equibilium in Al-Si-SiC system. It is observed that the matrix silicon content of the precursor wires are lowered when the alloy silicon content exceeds 5wt% in the fabrication process. Silicon segregates around the fibers and there is a radius concentration gradient in the matrix of precursor wires. A silicon diffusion model is suggested during precursor wires fabrication process. It is considered that the segregated silicon forms a concentration potenial barrier and prohabits silicon diffusion from melt to the fiber bundle centre, resulting lower silicon content in the matrix. The higher silicon content of alloy also degrades the infiltration property, especially for infiltration of the fiber preforms. TEM study of the composite interfaces shows that the interfacial reaction is very severe for the uncoated fibers. The SiC coating is reacted when the alloy silicon content below 2wt%. No interfacial reaction is found in SiC coated CF/Al-12wt%Si composite. Two kinds of silicon precipitation modes are found near interface, i.e., dotlike precipitation mode of the soluted silicon in the matrix contiguous to interface and silicon crystal precipitation mode on the interface and silicon crystal precipitation mode on the interface. No other form of pure silicon is found in the high silicon contented matrix. Precipitation of (Zr_3Al_4Si_5) intermetallic at interface is also found in SiC coated CF/Al-12wt%Si composite. In the matrix, zirconium exists in the form of Al_3Zr in the CF/pure Al and CF/Al-12wt%Si composites, while it changes to the form of (Zr_3Al_4Si_5) when more silicon is added into matrix.
页数66
语种中文
文献类型学位论文
条目标识符http://ir.imr.ac.cn/handle/321006/17565
专题中国科学院金属研究所
推荐引用方式
GB/T 7714
陈新国. 用K_2ZrF_6 助浸法制造SiC涂层C/Al复合材料及其材料界面[D]. 中国科学院金属研究所. 中国科学院金属研究所,1992.
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