Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells

doi:10.1021/acsami.2c17082

IMR OpenIR

	Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells
	Hao, Xiaodong 1; Zhang, Xishuo 1,2; Sun, Benyao 3; Yin, Deqiang 3; Dong, Hailiang 4; Wang, Jiahui 1,2; Huang, Biao 1,2; Xu, Yang 1,2; Shan, Hengsheng 1; Ma, Shufang 1; Chen, Chunlin 5; Xu, Bingshe 1,4,6
通讯作者	Hao, Xiaodong(hao.xiaodong@sust.edu.cn) ; Yin, Deqiang(deqiang.yin@cqu.edu.cn)
	2022-12-12
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
页码	8
摘要	The model system of the InGaN/GaN quantum wells (QWs), based on the first principles calculation, was chosen to understand the underlying mechanism of interfacial polarization and its synergic effect with the built-in electric field (Bef) at the p-n junction in solar cells (SLs). The polarized electric field (Pef) was generated due to the redistribution of electrons and holes at the interface; moreover, the Pef of InGaN/GaN heterostructure on the semipolar (01-11) GaN surface was consistent with that of on the N-polar (000-1) surface, which is on the lines of the Bef and favors the electron-hole separation efficiency in SLs. Furthermore, the growth of high-quality InGaN/GaN QWs on the semipolar (01-11) GaN surface was achieved. Such an atomic-scale investigation provides a fundamental understanding of the polarization charge induced Pef and its interaction coupling with Bef at the p-n junction, which could be generalized to polar material-based SLs.
关键词	polarization charge effect built-in electric field p-n junction semipolar InGaN GaN interface first principles calculation
资助者	National Natural Science Foundation of China ; Natural Science Special Project of Education Department of Shaanxi Province ; Scientific Research Foundation of Shaanxi University of Science and Technology ; Scientific Research Foundation from Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering
DOI	10.1021/acsami.2c17082
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[21902096] ; National Natural Science Foundation of China[11972097] ; Natural Science Special Project of Education Department of Shaanxi Province[19JK0136] ; Scientific Research Foundation of Shaanxi University of Science and Technology[126061803] ; Scientific Research Foundation from Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering[2021SX-AT001]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000897517200001
出版者	AMER CHEMICAL SOC
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/175748
专题	中国科学院金属研究所
通讯作者	Hao, Xiaodong; Yin, Deqiang
作者单位	1.Shaanxi Univ Sci & Technol, Mat Inst Atom & Mol Sci, Xian 710021, Peoples R China 2.Shaanxi Univ Sci & Technol, Sch Mat Sci & Engn, Xian 710021, Peoples R China 3.Chongqing Univ, Coll Aerosp Engn, Chongqing 400044, Peoples R China 4.Taiyuan Univ Technol, Key Lab Interface Sci & Engn Adv Mat, Taiyuan 030024, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 6.Shanxi Zheda Inst Adv Mat & Chem Engn, Taiyuan 030024, Shanxi, Peoples R China
推荐引用方式 GB/T 7714	Hao, Xiaodong,Zhang, Xishuo,Sun, Benyao,et al. Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2022:8.
APA	Hao, Xiaodong.,Zhang, Xishuo.,Sun, Benyao.,Yin, Deqiang.,Dong, Hailiang.,...&Xu, Bingshe.(2022).Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells.ACS APPLIED MATERIALS & INTERFACES,8.
MLA	Hao, Xiaodong,et al."Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells".ACS APPLIED MATERIALS & INTERFACES (2022):8.