| A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory | |
| Li, Wanying1,2; Guo, Yimeng1,2; Luo, Zhaoping1; Wu, Shuhao3; Han, Bo4,5; Hu, Weijin1; You, Lu6; Watanabe, Kenji7; Taniguchi, Takashi8; Alava, Thomas9; Chen, Jiezhi3; Gao, Peng4,5; Li, Xiuyan1; Wei, Zhongming10; Wang, Lin-Wang10; Liu, Yue-Yang10; Zhao, Chengxin11,12; Zhan, Xuepeng3; Han, Zheng Vitto13; Wang, Hanwen1 | |
| Corresponding Author | Liu, Yue-Yang(yueyangliu@semi.ac.cn) ; Zhao, Chengxin(chengxin.zhao@impcas.ac.cn) ; Zhan, Xuepeng(zhanxuepeng@sdu.edu.cn) ; Han, Zheng Vitto(zhenghan@sxu.edu.cn) ; Wang, Hanwen(hwwang15s@imr.ac.cn) |
| 2022-12-18 | |
| Source Publication | ADVANCED MATERIALS
 |
| ISSN | 0935-9648 |
| Pages | 10 |
| Abstract | Ferroelectricity, one of the keys to realize non-volatile memories owing to the remanent electric polarization, is an emerging phenomenon in the 2D limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric materials as an ingredient are very limited. Especially, gate-tunable ferroelectric vdW memristive device, which holds promises in future multi-bit data storage applications, remains challenging. Here, a gate-programmable multi-state memory is shown by vertically assembling graphite, CuInP2S6, and MoS2 layers into a metal(M)-ferroelectric(FE)-semiconductor(S) architecture. The resulted devices seamlessly integrate the functionality of both FE-memristor (with ON-OFF ratios exceeding 10(5) and long-term retention) and metal-oxide-semiconductor field effect transistor (MOS-FET). Thus, it yields a prototype of gate tunable giant electroresistance with multi-levelled ON-states in the FE-memristor in the vertical vdW assembly. First-principles calculations further reveal that such behaviors originate from the specific band alignment between the FE-S interface. Our findings pave the way for the engineering of ferroelectricity-mediated memories in future implementations of 2D nanoelectronics. |
| Keyword | 2D ferroelectrics array memristive device multi-bit storage van der waals heterostructures |
| Funding Organization | National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Elemental Strategy Initiative by the MEXT, Japan ; JSPS KAKENHI ; A3 Foresight by JSPS |
| DOI | 10.1002/adma.202208266 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Key R&D Program of China[2019YFA0307800] ; National Natural Science Foundation of China (NSFC)[12104462] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[92265203] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[62174155] ; Elemental Strategy Initiative by the MEXT, Japan[JPMXP0112101001] ; JSPS KAKENHI[19H05790] ; JSPS KAKENHI[20H00354] ; JSPS KAKENHI[21H05233] ; A3 Foresight by JSPS |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000899651700001 |
| Publisher | WILEY-V C H VERLAG GMBH |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/175846 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Liu, Yue-Yang; Zhao, Chengxin; Zhan, Xuepeng; Han, Zheng Vitto; Wang, Hanwen |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Anhui 230026, Peoples R China 3.Shandong Univ, Sch Informat Sci & Engn ISE, Qingdao 266000, Peoples R China 4.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China 5.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China 6.Soochow Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Thin Films, Suzhou 215006, Peoples R China 7.Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba 3050044, Japan 8.Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan 9.Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France 10.Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China 11.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 12.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China 13.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China |
| Recommended Citation GB/T 7714 | Li, Wanying,Guo, Yimeng,Luo, Zhaoping,et al. A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory[J]. ADVANCED MATERIALS,2022:10. |
| APA | Li, Wanying.,Guo, Yimeng.,Luo, Zhaoping.,Wu, Shuhao.,Han, Bo.,...&Wang, Hanwen.(2022).A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory.ADVANCED MATERIALS,10. |
| MLA | Li, Wanying,et al."A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory".ADVANCED MATERIALS (2022):10. |
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