A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory

doi:10.1002/adma.202208266

IMR OpenIR

	A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory
	Li, Wanying 1,2; Guo, Yimeng 1,2; Luo, Zhaoping 1; Wu, Shuhao 3; Han, Bo 4,5; Hu, Weijin 1; You, Lu 6; Watanabe, Kenji 7; Taniguchi, Takashi 8; Alava, Thomas 9; Chen, Jiezhi 3; Gao, Peng 4,5; Li, Xiuyan 1; Wei, Zhongming 10; Wang, Lin-Wang 10; Liu, Yue-Yang 10; Zhao, Chengxin 11,12; Zhan, Xuepeng 3; Han, Zheng Vitto 13; Wang, Hanwen 1
通讯作者	Liu, Yue-Yang(yueyangliu@semi.ac.cn) ; Zhao, Chengxin(chengxin.zhao@impcas.ac.cn) ; Zhan, Xuepeng(zhanxuepeng@sdu.edu.cn) ; Han, Zheng Vitto(zhenghan@sxu.edu.cn) ; Wang, Hanwen(hwwang15s@imr.ac.cn)
	2022-12-18
发表期刊	ADVANCED MATERIALS
ISSN	0935-9648
页码	10
摘要	Ferroelectricity, one of the keys to realize non-volatile memories owing to the remanent electric polarization, is an emerging phenomenon in the 2D limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric materials as an ingredient are very limited. Especially, gate-tunable ferroelectric vdW memristive device, which holds promises in future multi-bit data storage applications, remains challenging. Here, a gate-programmable multi-state memory is shown by vertically assembling graphite, CuInP2S6, and MoS2 layers into a metal(M)-ferroelectric(FE)-semiconductor(S) architecture. The resulted devices seamlessly integrate the functionality of both FE-memristor (with ON-OFF ratios exceeding 10(5) and long-term retention) and metal-oxide-semiconductor field effect transistor (MOS-FET). Thus, it yields a prototype of gate tunable giant electroresistance with multi-levelled ON-states in the FE-memristor in the vertical vdW assembly. First-principles calculations further reveal that such behaviors originate from the specific band alignment between the FE-S interface. Our findings pave the way for the engineering of ferroelectricity-mediated memories in future implementations of 2D nanoelectronics.
关键词	2D ferroelectrics array memristive device multi-bit storage van der waals heterostructures
资助者	National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Elemental Strategy Initiative by the MEXT, Japan ; JSPS KAKENHI ; A3 Foresight by JSPS
DOI	10.1002/adma.202208266
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2019YFA0307800] ; National Natural Science Foundation of China (NSFC)[12104462] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[92265203] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[62174155] ; Elemental Strategy Initiative by the MEXT, Japan[JPMXP0112101001] ; JSPS KAKENHI[19H05790] ; JSPS KAKENHI[20H00354] ; JSPS KAKENHI[21H05233] ; A3 Foresight by JSPS
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000899651700001
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：44[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/175846
专题	中国科学院金属研究所
通讯作者	Liu, Yue-Yang; Zhao, Chengxin; Zhan, Xuepeng; Han, Zheng Vitto; Wang, Hanwen
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Anhui 230026, Peoples R China 3.Shandong Univ, Sch Informat Sci & Engn ISE, Qingdao 266000, Peoples R China 4.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China 5.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China 6.Soochow Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Thin Films, Suzhou 215006, Peoples R China 7.Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba 3050044, Japan 8.Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan 9.Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France 10.Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China 11.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 12.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China 13.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
推荐引用方式 GB/T 7714	Li, Wanying,Guo, Yimeng,Luo, Zhaoping,et al. A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory[J]. ADVANCED MATERIALS,2022:10.
APA	Li, Wanying.,Guo, Yimeng.,Luo, Zhaoping.,Wu, Shuhao.,Han, Bo.,...&Wang, Hanwen.(2022).A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory.ADVANCED MATERIALS,10.
MLA	Li, Wanying,et al."A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory".ADVANCED MATERIALS (2022):10.