Interface Engineering of Oxygen Vacancy Ordering in an Oxide Superlattice

doi:10.1021/acs.jpcc.2c05758

IMR OpenIR

	Interface Engineering of Oxygen Vacancy Ordering in an Oxide Superlattice
	Bin Zhang, Ning 1,2; Fang, Zhong 2,3; Zhu, Yin Lian 4; Wang, Yu Jia 2; Tang, Yun Long 2; Zou, Min Jie 4; Ma, Xiu Liang 2,5
通讯作者	Zhu, Yin Lian(zhuyinlian@sslab.org.cn)
	2022-11-29
发表期刊	JOURNAL OF PHYSICAL CHEMISTRY C
ISSN	1932-7447
页码	9
摘要	Symmetry breaking induced by interfaces may produce abundant abnormal physical phenomena. The novel phenomena generated by these interfaces inspire people to explore the physics of oxide interface engineering. For LaCoO3-x materials, it is undoubtedly critical to understand the structure variations of thin films caused by different interface conditions for the successful application of thin films in electronic devices such as solid oxide fuel cells, oxygen separation membranes, gas sensors, rechargeable batteries, memristors, etc. Oxygen vacancy configurations and concentration are coupled with the magnetic, electronic, and transport properties of perovskite oxides, and manipulating the physical properties by tuning the vacancy structures of thin films is crucial for applications of these functional devices. Here, we report a direct atomic-scale observation of the variation of the oxygen vacancy structure in strained LaCoO3-x films under different boundary conditions. Using aberration corrected transmission electron microscopy, we observe that in an 8 nm LaCoO3-x film grown on the SrTiO3 substrate, the ordered oxygen vacancies stack layer by layer along the in-plane direction with a period of 3 unit cells (UCs) and appear in a staggered-arrangement way. When a 20 nm BiFeO3 film is grown on top of the LaCoO3-x film, the oxygen vacancy concentration in the LaCoO3-x film reduces and becomes very low. Different from that in free upper surfaces, the oxygen vacancy concentration is too low to be ordered. When a 20 nm PbTiO3 film is grown on the LaCoO3-x film, the oxygen vacancy concentration in the LaCoO3-x film is very high, and different from that of the free upper surface, the ordered oxygen vacancies stack layer by layer along the out-of-plane direction with a period of 2 UCs, and the oxygen vacancies stack in a nonstaggered-arrangement way. Further reducing the film thickness, when a 6 UC PbTiO3 film is grown on the 8 UC LaCoO3-x film, the oxygen vacancy concentration in the LaCoO3-x film is lower than that of 20 nm PTO/8 nm LCO/STO, and the ordered oxygen vacancies still stack layered along the out-of-plane direction with a period of 2 UCs, but the oxygen vacancies stack in a staggered-arrangement way. First-principles calculations decipher the atomic-scale mechanism of oxygen vacancy distribution. These results suggest that oxygen vacancy distribution is heavily associated with interface configurations. These studies are of great significance for understanding the behavior of oxygen vacancy and guiding the design of different interfaces to achieve the appropriate structure and performance for functional electronic devices.
资助者	National Natural Science Foundation of China ; Key Research Program of Frontier Sciences CAS ; Shenyang National Laboratory for Materials Science ; Scientific Instrument Developing Project of CAS ; Youth Innovation Promotion Association CAS
DOI	10.1021/acs.jpcc.2c05758
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51971223] ; National Natural Science Foundation of China[51922100] ; Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; Shenyang National Laboratory for Materials Science[L2019R06] ; Shenyang National Laboratory for Materials Science[L2019R08] ; Shenyang National Laboratory for Materials Science[L2019F01] ; Shenyang National Laboratory for Materials Science[L2019F13] ; Scientific Instrument Developing Project of CAS[YJKYYQ20200066] ; Youth Innovation Promotion Association CAS[2021187] ; Youth Innovation Promotion Association CAS[Y202048]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000891802100001
出版者	AMER CHEMICAL SOC
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/175923
专题	中国科学院金属研究所
通讯作者	Zhu, Yin Lian
作者单位	1.City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 999077, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 4.Bay Area Ctr Electron Microscopy, Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China 5.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China
推荐引用方式 GB/T 7714	Bin Zhang, Ning,Fang, Zhong,Zhu, Yin Lian,et al. Interface Engineering of Oxygen Vacancy Ordering in an Oxide Superlattice[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2022:9.
APA	Bin Zhang, Ning.,Fang, Zhong.,Zhu, Yin Lian.,Wang, Yu Jia.,Tang, Yun Long.,...&Ma, Xiu Liang.(2022).Interface Engineering of Oxygen Vacancy Ordering in an Oxide Superlattice.JOURNAL OF PHYSICAL CHEMISTRY C,9.
MLA	Bin Zhang, Ning,et al."Interface Engineering of Oxygen Vacancy Ordering in an Oxide Superlattice".JOURNAL OF PHYSICAL CHEMISTRY C (2022):9.