High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure

doi:10.1016/j.jssc.2022.123506

IMR OpenIR

	High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure
	Li, Mingze 1; Wang, Zhenhua 1; Han, Dan 1; Shi, Xudong 1; Li, Tingting 1; Gao, Xuan P. A.2; Zhang, Zhidong 1
通讯作者	Li, Mingze(mzli14s@imr.ac.cn) ; Wang, Zhenhua(zhwang@imr.ac.cn)
	2022-11-01
发表期刊	JOURNAL OF SOLID STATE CHEMISTRY
ISSN	0022-4596
卷号	315 页码:6
摘要	The coexistence of bulk electronic band gap and gapless surface states of topological insulators (TIs) opens up many new opportunities in optoelectronic devices. Here we demonstrate the synthesis and photodetection response of vertical Sb2Te3 nanoplate film grown on n-type Si substrates. The small bulk bandgap of Sb2Te3 and surface states conduction lead to effective light absorption and photocarrier transport. The device exhibits a significant photoresponse over a broad spectral range between 350 and 1400 nm. The switching speed and on/off ratio Iph/Id are estimated to be 3 ms and 5900, respectively, which are much better than those of other TI-based photodetectors. Given the simple device preparation and compatibility with silicon technology, the unconven-tional structure Sb2Te3/Si heterostructure holds great promise for high-performance optoelectronic applications.
关键词	Topological insulators Sb 2 Te 3 Si heterostructure Vertically aligned nanoplates High surface -to -bulk ratio Photoelectric property
资助者	National Natural Science Foundation of China (NSFC)
DOI	10.1016/j.jssc.2022.123506
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China (NSFC)[51971220] ; National Natural Science Foundation of China (NSFC)[52031014]
WOS研究方向	Chemistry
WOS类目	Chemistry, Inorganic & Nuclear ; Chemistry, Physical
WOS记录号	WOS:000863981900004
出版者	ACADEMIC PRESS INC ELSEVIER SCIENCE
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/176207
专题	中国科学院金属研究所
通讯作者	Li, Mingze; Wang, Zhenhua
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
推荐引用方式 GB/T 7714	Li, Mingze,Wang, Zhenhua,Han, Dan,et al. High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure[J]. JOURNAL OF SOLID STATE CHEMISTRY,2022,315:6.
APA	Li, Mingze.,Wang, Zhenhua.,Han, Dan.,Shi, Xudong.,Li, Tingting.,...&Zhang, Zhidong.(2022).High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure.JOURNAL OF SOLID STATE CHEMISTRY,315,6.
MLA	Li, Mingze,et al."High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure".JOURNAL OF SOLID STATE CHEMISTRY 315(2022):6.