| Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction | |
| Zang, Chao1,2; Li, Bo1,2; Sun, Yun1,2; Feng, Shun1,3; Wang, Xin-Zhe1,2; Wang, Xiaohui1,2; Sun, Dong-Ming1,2 | |
| Corresponding Author | Sun, Yun(yunsun@imr.ac.cn) ; Wang, Xiaohui(wang@imr.ac.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn) |
| 2022-10-11 | |
| Source Publication | NANOSCALE ADVANCES
 |
| ISSN | 2516-0230 |
| Pages | 8 |
| Abstract | For filamentary resistive random-access memory (RRAM) devices, the switching behavior between different resistance states usually occurs abruptly, while the random formation of conductive filaments usually results in large fluctuations in resistance states, leading to poor uniformity. Schottky barrier modulation enables resistive switching through charge trapping/de-trapping at the top-electrode/oxide interface, which is effective for improving the uniformity of RRAM devices. Here, we report a uniform RRAM device based on a MXene-TiO2 Schottky junction. The defect traps within the MXene formed during its fabricating process can trap and release the charges at the MXene-TiO2 interface to modulate the Schottky barrier for the resistive switching behavior. Our devices exhibit excellent current on-off ratio uniformity, device-to-device reproducibility, long-term retention, and endurance reliability. Due to the different carrier-blocking abilities of the MXene-TiO2 and TiO2-Si interface barriers, a self-rectifying behavior can be obtained with a rectifying ratio of 10(3), which offers great potential for large-scale RRAM applications based on MXene materials. |
| Funding Organization | National Key Research and Development Program of China ; National Natural Science Foundation of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences |
| DOI | 10.1039/d2na00281g |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Key Research and Development Program of China[2021YFA1200801] ; National Natural Science Foundation of China[62125406] ; National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[52188101] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS ID | WOS:000871601500001 |
| Publisher | ROYAL SOC CHEMISTRY |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/176340 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Sun, Yun; Wang, Xiaohui; Sun, Dong-Ming |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, 393 Huaxiazhong Rd, Shanghai 200031, Peoples R China |
| Recommended Citation GB/T 7714 | Zang, Chao,Li, Bo,Sun, Yun,et al. Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction[J]. NANOSCALE ADVANCES,2022:8. |
| APA | Zang, Chao.,Li, Bo.,Sun, Yun.,Feng, Shun.,Wang, Xin-Zhe.,...&Sun, Dong-Ming.(2022).Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction.NANOSCALE ADVANCES,8. |
| MLA | Zang, Chao,et al."Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction".NANOSCALE ADVANCES (2022):8. |
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