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Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect
Song, Yuhang1,2; Dai, Zhiming3,4; Liu, Long1; Wu, Jinxiang1,2; Li, Tingting1,2; Zhao, Xiaotian1; Liu, Wei1; Zhang, Zhidong1
Corresponding AuthorZhao, Xiaotian(xtzhao@imr.ac.cn) ; Liu, Wei(wliu@imr.ac.cn)
2022-11-09
Source PublicationADVANCED ELECTRONIC MATERIALS
ISSN2199-160X
Pages8
AbstractField-free switching is a critical issue for spin-orbit torque-induced magnetic random-access memory (SOT-MRAM) with perpendicular magnetic anisotropic (PMA) towards application. If only the spin-polarized electrons along the y-direction (sigma(y)) are used, deterministic switching cannot be achieved, as the electron polarization direction and easy magnetization direction are orthogonal. In this work, z-direction polarized electrons (sigma(z)) produced by the spin Hall effect are utilized to provide the switching direction and sigma(y) provides the propulsion of magnetic reorientation. With the cooperation of sigma(y) and sigma(z) by the spin Hall effect, field-free switching is achieved. To combine with magnetic tunnel junction (MTJ), a model is proposed, in which heavy metals providing sigma(z) are deposited on MTJ with asymmetric writing line widths. This model retains the characteristics of read-write separation and realizes deterministic switching based on SOT.
Keywordfield-free switching perpendicular magnetic anisotropy spin Hall effect spin-orbit torque spin-polarized electrons
Funding OrganizationNational Nature Science Foundation of China
DOI10.1002/aelm.202200987
Indexed BySCI
Language英语
Funding ProjectNational Nature Science Foundation of China[52031014] ; National Nature Science Foundation of China[52171196]
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000880377000001
PublisherWILEY
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/176554
Collection中国科学院金属研究所
Corresponding AuthorZhao, Xiaotian; Liu, Wei
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Huaiyin Normal Univ, Dept Phys, Huaian 223300, Peoples R China
4.Huaiyin Normal Univ, Jiangsu Key Lab Modern Measurement Technol & Inte, Huaian 223300, Peoples R China
Recommended Citation
GB/T 7714
Song, Yuhang,Dai, Zhiming,Liu, Long,et al. Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect[J]. ADVANCED ELECTRONIC MATERIALS,2022:8.
APA Song, Yuhang.,Dai, Zhiming.,Liu, Long.,Wu, Jinxiang.,Li, Tingting.,...&Zhang, Zhidong.(2022).Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect.ADVANCED ELECTRONIC MATERIALS,8.
MLA Song, Yuhang,et al."Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect".ADVANCED ELECTRONIC MATERIALS (2022):8.
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