| Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO3 Thin Films | |
| Si, Yangyang1; Zhang, Tianfu1; Chen, Zuhuang1,9; Zhang, Qinghua2; Xu, Shuai2; Lin, Ting2; Huang, Haoliang3; Zhou, Chao1; Chen, Shanquan1; Liu, Suzhen4,5; Dong, Yongqi6,7; Liu, Chenhan8; Tang, Yunlong4; Lu, Yalin3; Jin, Kuijuan2; Guo, Er-Jia2; Lin, Xi1,10,11 | |
| 通讯作者 | Chen, Zuhuang(zuhuang@hit.edu.cn) ; Lin, Xi(linxi@hit.edu.cn) |
| 2022-11-01 | |
| 发表期刊 | ACS APPLIED MATERIALS & INTERFACES
 |
| ISSN | 1944-8244 |
| 页码 | 9 |
| 摘要 | Antiferroelectric PbZrO3 has attracted renewed interest in recent years because of its unique properties and wide range of potential applications. However, the nature of antiferroelectricity and its evolution with the electric field and temperature remain controversial, mostly due to the difficulty of obtaining high-quality single-crystal samples. The lack of consensus regarding the phase transition in PbZrO3 is not only important on a fundamental side but also greatly hinders further applications. Herein, high-quality PbZrO3 epitaxial thin films are successfully fabricated by pulsed laser deposition. The structural and physical properties of the films are systematically studied via a combination of electric property measurements, X-ray diffraction, scanning transmission electron microscopy imaging, and second-harmonic generation studies. Our studies unveil the noncentrosymmetric nature of PbZrO3 films at room temperature. Moreover, the Curie temperature increased to 270 degrees, similar to 40 degrees higher than that in the bulk, and no intermediate ferroelectric phase was observed. Besides, an incipient ferroelectric with relaxor-like behavior above the Curie temperature due to the existence of a local polar cluster in the high-temperature paraelectric phase is experimentally observed for the first time. Our studies provide a better understanding of PbZrO3 thin films and pave the way for practical applications of antiferroelectric material in modern electronic devices. |
| 关键词 | PbZrO3 antiferroelectric epitaxial thin films phase transitions ferroelectric |
| 资助者 | National Natural Science Foundation of China ; Guangdong Basic and Applied Basic Research Foundation ; Shenzhen Science and Technology Innovation project ; Shenzhen Science and Technology Program ; China Postdoctoral Science Foundation ; Fund of Science and Technology on Reactor Fuel and Materials Laboratory ; Scientific Instrument Developing Project of CAS ; Youth Innovation Promotion Association of CAS ; Natural Science Foundation of Jiangsu Province ; Basic Science (Natural Science) Research Project of Higher Education Institutions of Jiangsu Province |
| DOI | 10.1021/acsami.2c14291 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[U1932116] ; National Natural Science Foundation of China[52072400] ; National Natural Science Foundation of China[11721404] ; National Natural Science Foundation of China[11974390] ; National Natural Science Foundation of China[51922100] ; Guangdong Basic and Applied Basic Research Foundation[2020B1515020029] ; Shenzhen Science and Technology Innovation project[JCYJ20200109112829287] ; Shenzhen Science and Technology Program[KQTD20200820113045083] ; Shenzhen Science and Technology Program[ZDSYS20190902093220279] ; China Postdoctoral Science Foundation[2022T150158] ; Fund of Science and Technology on Reactor Fuel and Materials Laboratory[JCKYS2019201074] ; Scientific Instrument Developing Project of CAS[YJKYYQ20200066] ; Youth Innovation Promotion Association of CAS[Y202048] ; Natural Science Foundation of Jiangsu Province[BK20210565] ; Basic Science (Natural Science) Research Project of Higher Education Institutions of Jiangsu Province[21KJB470009] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000884793600001 |
| 出版者 | AMER CHEMICAL SOC |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/176787 |
| 专题 | 中国科学院金属研究所 |
| 通讯作者 | Chen, Zuhuang; Lin, Xi |
| 作者单位 | 1.Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China 2.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 3.Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Anhui Lab Adv Photon Sci & Technol, Hefei 230026, Anhui, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 5.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China 6.Univ Sci & Technol China, Dept Phys, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China 7.Univ Sci & Technol China, Dept Phys, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China 8.Nanjing Normal Univ, Sch Energy & Mech Engn, Microand Nanoscale Thermal Measurement & Thermal M, Nanjing 210046, Jiangsu, Peoples R China 9.Harbin Inst Technol, Flexible Printed Elect Technol Ctr, Shenzhen 518055, Guangdong, Peoples R China 10.Harbin Inst Technol, Blockchain Dev & Res Inst, Shenzhen 518055, Guangdong, Peoples R China 11.Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Heilongjiang, Peoples R China |
| 推荐引用方式 GB/T 7714 | Si, Yangyang,Zhang, Tianfu,Chen, Zuhuang,et al. Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO3 Thin Films[J]. ACS APPLIED MATERIALS & INTERFACES,2022:9. |
| APA | Si, Yangyang.,Zhang, Tianfu.,Chen, Zuhuang.,Zhang, Qinghua.,Xu, Shuai.,...&Lin, Xi.(2022).Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO3 Thin Films.ACS APPLIED MATERIALS & INTERFACES,9. |
| MLA | Si, Yangyang,et al."Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO3 Thin Films".ACS APPLIED MATERIALS & INTERFACES (2022):9. |
| 条目包含的文件 | 条目无相关文件。 | |||||
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论