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Quantum Hall phase in graphene engineered by interfacial charge coupling
Wang, Yaning1,2,3,4,5; Gao, Xiang1,3; Yang, Kaining1,3; Gu, Pingfan6,7,8; Lu, Xin9; Zhang, Shihao9,10; Gao, Yuchen6,7,8; Ren, Naijie1,3; Dong, Baojuan1,3; Jiang, Yuhang11; Watanabe, Kenji12; Taniguchi, Takashi13; Kang, Jun14; Lou, Wenkai15; Mao, Jinhai16,17; Liu, Jianpeng9,10; Ye, Yu6,7,8; Han, Zheng1,3,5; Chang, Kai15; Zhang, Jing1,3; Zhang, Zhidong2,4
Corresponding AuthorMao, Jinhai(jhmao@ucas.ac.cn) ; Liu, Jianpeng(liujp@shanghaitech.edu.cn) ; Ye, Yu(ye_yu@pku.edu.cn) ; Han, Zheng(vitto.han@gmail.com) ; Chang, Kai(kchang@semi.ac.cn)
2022-11-21
Source PublicationNATURE NANOTECHNOLOGY
ISSN1748-3387
Pages9
AbstractInterfacing graphene with an antiferromagnetic insulator CrOCl enables the observation of strong interfacial coupling in the quantum Hall regime. The quantum Hall effect can be substantially affected by interfacial coupling between the host two-dimensional electron gases and the substrate, and has been predicted to give rise to exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this interaction remains challenging. Here we demonstrate the observation of an unusual quantum Hall effect, which differs markedly from that of the known picture, in graphene samples in contact with an antiferromagnetic insulator CrOCl equipped with dual gates. Two distinct quantum Hall phases are developed, with the Landau levels in monolayer graphene remaining intact at the conventional phase, but largely distorted for the interfacial-coupling phase. The latter quantum Hall phase is even present close to the absence of a magnetic field, with the consequential Landau quantization following a parabolic relation between the displacement field and the magnetic field. This characteristic prevails up to 100 K in a wide effective doping range from 0 to 10(13) cm(-2).
Funding OrganizationNational Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Chinese Academy of Sciences ; MEXT, Japan ; JSPS KAKENHI ; JSPS
DOI10.1038/s41565-022-01248-4
Indexed BySCI
Language英语
Funding ProjectNational Key R&D Program of China[2019YFA0307800] ; National Key R&D Program of China[2017YFA0303400] ; National Key R&D Program of China[2017YFA0206302] ; National Key R&D Program of China[2018YFA0306900] ; National Key R&D Program of China[2020YFA0309601] ; National Key R&D Program of China[2018YFA0306101] ; National Natural Science Foundation of China (NSFC)[92265203] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[52031014] ; National Natural Science Foundation of China (NSFC)[11974340] ; National Natural Science Foundation of China (NSFC)[12174257] ; National Natural Science Foundation of China (NSFC)[U21A6004] ; National Natural Science Foundation of China (NSFC)[12004228] ; National Natural Science Foundation of China (NSFC)[51627801] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB28000000] ; Chinese Academy of Sciences[QYZDJ-SSW-SYS001] ; Chinese Academy of Sciences[XDPB22] ; MEXT, Japan[JPMXP0112101001] ; JSPS KAKENHI[JP20H00354] ; JSPS
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000886188900002
PublisherNATURE PORTFOLIO
Citation statistics
Cited Times:34[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/176858
Collection中国科学院金属研究所
Corresponding AuthorMao, Jinhai; Liu, Jianpeng; Ye, Yu; Han, Zheng; Chang, Kai
Affiliation1.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China
3.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan, Peoples R China
4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang, Peoples R China
5.Liaoning Acad Mat, Shenyang, Peoples R China
6.Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China
7.Peking Univ, State Key Lab Mesoscop Phys, Sch Phys, Beijing, Peoples R China
8.Peking Univ, Frontiers Sci Ctr Nanooptoelect, Sch Phys, Beijing, Peoples R China
9.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China
10.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai, Peoples R China
11.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing, Peoples R China
12.Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki, Japan
13.Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki, Japan
14.Beijing Computat Sci Res Ctr, Beijing, Peoples R China
15.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing, Peoples R China
16.Univ Chinese Acad Sci, Sch Phys Sci, Beijing, Peoples R China
17.Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing, Peoples R China
Recommended Citation
GB/T 7714
Wang, Yaning,Gao, Xiang,Yang, Kaining,et al. Quantum Hall phase in graphene engineered by interfacial charge coupling[J]. NATURE NANOTECHNOLOGY,2022:9.
APA Wang, Yaning.,Gao, Xiang.,Yang, Kaining.,Gu, Pingfan.,Lu, Xin.,...&Zhang, Zhidong.(2022).Quantum Hall phase in graphene engineered by interfacial charge coupling.NATURE NANOTECHNOLOGY,9.
MLA Wang, Yaning,et al."Quantum Hall phase in graphene engineered by interfacial charge coupling".NATURE NANOTECHNOLOGY (2022):9.
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