Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device

doi:10.1002/adma.202308090

IMR OpenIR

	Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device
	Feng, Siyu 1,2; Li, Jiangxu 1; Feng, Lizhi 1,3,4; Liu, Zitong 1; Wang, Junchao 1; Cui, Cong 1; Zhou, Ouxiang 1; Deng, Lijie 1,3; Xu, Hanning 1; Leng, Bing 5; Chen, Xing-Qiu 1; Jiang, Xin 1; Liu, Baodan 3,4; Zhang, Xinglai 1
通讯作者	Leng, Bing(lengbing@cmu.edu.cn) ; Liu, Baodan(liubaodan@mail.neu.edu.cn) ; Zhang, Xinglai(zhangxl@imr.ac.cn)
	2023-10-27
发表期刊	ADVANCED MATERIALS
ISSN	0935-9648
页码	11
摘要	Simultaneous implementation of photodetector and neuromorphic vision sensor (NVS) on a single device faces a great challenge, due to the inherent speed discrepancy in their photoresponse characteristics. In this work, a trench-bridged GaN/Ga2O3/GaN back-to-back double heterojunction array device is fabricated to enable the advanced functionalities of both devices on a single device. Interestingly, the device shows fast photoresponse and persistent photoconductivity behavior at low and high voltages, respectively, through the modulation of oxygen vacancy ionization and de-ionization processes in Ga2O3. Consequently, the role of the optoelectronic device can be altered between the photodetector and NVS by simply adjusting the magnitude of bias voltage. As a photodetector, the device is able to realize fast optical imaging and optical communication functions. On the other hand, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing as an NVS. The utilization of NVS for image pre-processing leads to a noticeable enhancement in both recognition accuracy and efficiency. The results presented in this work not only offer a new avenue to obtain complex functionality on a single optoelectronic device but also provide opportunities to implement advanced robotic vision systems and neuromorphic computing.
关键词	Ga2O3 GaN neuromorphic vision sensors photodetectors synaptic plasticity trench-bridged heterostructure
资助者	S.F. and J.L. contributed equally to this work. This work was partially supported by the Liaoning Province Natural Science Fund Program (2022-MS-014, 2022-YGJC-41), the Youth Innovation Promotion Association, the Chinese Academy of Sciences (2019197), the ; Liaoning Province Natural Science Fund Program ; Youth Innovation Promotion Association ; Chinese Academy of Sciences ; Guangdong Provincial Natural Science Foundation ; Scientific Reasearch Project of Foshan Talents
DOI	10.1002/adma.202308090
收录类别	SCI
语种	英语
资助项目	S.F. and J.L. contributed equally to this work. This work was partially supported by the Liaoning Province Natural Science Fund Program (2022-MS-014, 2022-YGJC-41), the Youth Innovation Promotion Association, the Chinese Academy of Sciences (2019197), the[2022-MS-014] ; S.F. and J.L. contributed equally to this work. This work was partially supported by the Liaoning Province Natural Science Fund Program (2022-MS-014, 2022-YGJC-41), the Youth Innovation Promotion Association, the Chinese Academy of Sciences (2019197), the[2022-YGJC-41] ; Liaoning Province Natural Science Fund Program ; Youth Innovation Promotion Association[2019197] ; Chinese Academy of Sciences[2023A1515010678] ; Guangdong Provincial Natural Science Foundation[200076622001] ; Scientific Reasearch Project of Foshan Talents
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001093972500001
出版者	WILEY-V C H VERLAG GMBH
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/177564
专题	中国科学院金属研究所
通讯作者	Leng, Bing; Liu, Baodan; Zhang, Xinglai
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Northeastern Univ, Sch Mat Sci & Engn, 11 Wenhua Rd, Shenyang 110819, Peoples R China 4.Northeastern Univ, Foshan Grad Sch Innovat, 2 Zhihui Rd, Foshan 528300, Peoples R China 5.China Med Univ, Affiliated Hosp 1, Dept Plast Surg, 155 North Nanjing St, Shenyang 110001, Peoples R China
推荐引用方式 GB/T 7714	Feng, Siyu,Li, Jiangxu,Feng, Lizhi,et al. Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device[J]. ADVANCED MATERIALS,2023:11.
APA	Feng, Siyu.,Li, Jiangxu.,Feng, Lizhi.,Liu, Zitong.,Wang, Junchao.,...&Zhang, Xinglai.(2023).Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device.ADVANCED MATERIALS,11.
MLA	Feng, Siyu,et al."Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device".ADVANCED MATERIALS (2023):11.