Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era

doi:10.1016/j.mattod.2022.11.023

IMR OpenIR

	Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era
	Wang, Xiaoyue 1,2; Liu, Chi 1,2; Wei, Yuning 1,2; Feng, Shun 2; Sun, Dongming 1,2; Cheng, Huiming 2,3
通讯作者	Liu, Chi(chiliu@imr.ac.cn) ; Sun, Dongming(dmsun@imr.ac.cn)
	2023-03-01
发表期刊	MATERIALS TODAY
ISSN	1369-7021
卷号	63 页码:170-187
摘要	Since the 1960s, the feature size of metal oxide semiconductor field-effect transistors has been scaled down to sub-micrometer and even nanometer to increase the transistor density on a chip according to the Moore's law, leading to smaller device, faster speed and lower power consumption. In this process, various new materials and technologies have been introduced including SiGe strained silicon and high -k metal gate. Today, tremendous efforts are being made for the use of three-dimensional (3D) technologies such as fin-structured field-effect transistors, gate-all-around field-effect transistors and 3D integration. At the same time, low-dimensional materials such as carbon nanotubes, graphene and transition metal dichalcogenides are being extensively studied for nano-device fabrication. Here, the development of devices using both 3D structures and low-dimensional materials is reviewed. By combining these two key strategies, 3D transistors and integration based on low-dimensional materials are expected to achieve the highest gate control ability and device density, which is promising to continue the Moore's law even further.
关键词	Field-effect transistors Three-dimensional integration Low-dimensional materials Carbon nanotubes post-Moore's law era
资助者	National Natural Science Foundation of China ; Chinese Academy of Sciences ; National Key Research and Development Program of China
DOI	10.1016/j.mattod.2022.11.023
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[62125406] ; Chinese Academy of Sciences[SYNL2020] ; Chinese Academy of Sciences[SKLA-2019-03] ; Chinese Academy of Sciences[ZDBS-LY-JSC027] ; National Key Research and Development Program of China[2021YFA1200801]
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:000990662500001
出版者	ELSEVIER SCI LTD
引用统计	被引频次：12[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/177663
专题	中国科学院金属研究所
通讯作者	Liu, Chi; Sun, Dongming
作者单位	1.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Inst Technol Carbon Neutral, Shenzhen Inst Adv Technol, 1068 Xueyuan Ave, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Wang, Xiaoyue,Liu, Chi,Wei, Yuning,et al. Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era[J]. MATERIALS TODAY,2023,63:170-187.
APA	Wang, Xiaoyue,Liu, Chi,Wei, Yuning,Feng, Shun,Sun, Dongming,&Cheng, Huiming.(2023).Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era.MATERIALS TODAY,63,170-187.
MLA	Wang, Xiaoyue,et al."Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era".MATERIALS TODAY 63(2023):170-187.