| Effect of Cu/Ga interfacial reaction on heat transfer performance | |
| Du, Xinyu1,3; Wang, Wendong2,3; Ding, Zifeng1; Wang, Xiaojing1; Qiao, Yanxin1; Wei, Song4; Zhu, Qingsheng2,3; Guo, Jingdong2,3 | |
| Corresponding Author | Guo, Jingdong(jdguo@imr.ac.cn) |
| 2023-06-01 | |
| Source Publication | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| ISSN | 0957-4522 |
| Volume | 34Issue:17Pages:10 |
| Abstract | The interfacial reactions between Ga and Cu were studied under isothermal conditions at 70, 110, and 150 degrees C. The SEM morphology and XRD analysis revealed that only CuGa2 phases were formed at these temperatures. The growth of CuGa2 is described by the parabolic law, indicating that the body diffusion mechanism plays a dominant role in its growth. The activation energy of CuGa2 change was calculated as 14.25 kJ/mol. The effect of the intermetallic compounds (IMCs) growth on the heat transfer performance of gallium-based thermal interface materials (Ga-based TIMs) has been investigated. Thermal resistance test results show that the thermal resistance value rapidly decreases during the aging from 0 to 6 h and increases slowly in the subsequent aging process. These findings suggest that the thermal transfer performance of Ga-based TIM will not be significantly impacted by the formation and growth of CuGa2 at the interface. |
| Funding Organization | National Natural Science Foundation of China ; Guangxi Natural Science Foundation ; Guangxi Science and Technology Program ; Science and Technology Plan Project of Yunnan province |
| DOI | 10.1007/s10854-023-10782-3 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[51971231] ; Guangxi Natural Science Foundation[2020GXNSFBA297109] ; Guangxi Science and Technology Program[GuikeAD20297023] ; Science and Technology Plan Project of Yunnan province[202101BC070001-007] |
| WOS Research Area | Engineering ; Materials Science ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:001007922800003 |
| Publisher | SPRINGER |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/178226 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Guo, Jingdong |
| Affiliation | 1.Jiangsu Univ Sci & Technol, Coll Mat Sci & Engn, Zhenjiang 212001, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guangxi Key Lab Mfg Syst & Adv Mfg Technol, Guilin 541004, Peoples R China |
| Recommended Citation GB/T 7714 | Du, Xinyu,Wang, Wendong,Ding, Zifeng,et al. Effect of Cu/Ga interfacial reaction on heat transfer performance[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2023,34(17):10. |
| APA | Du, Xinyu.,Wang, Wendong.,Ding, Zifeng.,Wang, Xiaojing.,Qiao, Yanxin.,...&Guo, Jingdong.(2023).Effect of Cu/Ga interfacial reaction on heat transfer performance.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,34(17),10. |
| MLA | Du, Xinyu,et al."Effect of Cu/Ga interfacial reaction on heat transfer performance".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 34.17(2023):10. |
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