Revealing impurity evolution in silicon-doped diamond film via thermal oxidation

doi:10.1016/j.carbon.2022.11.070

IMR OpenIR

	Revealing impurity evolution in silicon-doped diamond film via thermal oxidation
	Lu, Jiaqi 1,2; Yang, Bing 1,2; Li, Haining 1,2; Guo, Xiaokun 1,2; Huang, Nan 1; Liu, Lusheng 1; Jiang, Xin 1,3
通讯作者	Yang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn)
	2023-01-25
发表期刊	CARBON
ISSN	0008-6223
卷号	203 页码:337-346
摘要	The incorporation of impurity atoms into diamonds has been an important issue for the application in the area of electronics, opto-electrics, and quantum optics with color centers. To date, it remains a challenge to explore the impurity distribution in diamond films owing to the low incorporation efficiency. In this work, Si-doped diamond films were deposited in microwave CVD system. Thermal oxidation was employed to selectively etch the nondiamond phase to study the impurity distribution and evolution. For micro-/nano-sized diamond films, the micro-sized grains remain intact, while the diamond nanocrystals are oxidized into porous oxides. The diamond needles exhibit strong silicon-vacancy center optical emission at 738 nm, implying that the Si atoms are incorporated into the lattice. Detailed microstructure characterizations reveal that the porous oxides are crystallized in amorphous state, consisting of silicon, oxygen, and carbon elements. Such abundance of Si in the amorphous porous oxides suggests that the Si atoms segregate at the grain boundaries. Therefore, this work provides a new path to reveal the impurity distribution along diamond crystalline defects. Moreover, the in-situ formed silicon oxide can act as an anti-reflection coating to enhance the optical emission of color centers, which is important for their optical applications.
关键词	Diamond Color centers Impurity doping Thermal oxidation Microstructure
资助者	National Natural Science Foundation of China
DOI	10.1016/j.carbon.2022.11.070
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[52172056] ; National Natural Science Foundation of China[51872294]
WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary
WOS记录号	WOS:001015402600001
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/178379
专题	中国科学院金属研究所
通讯作者	Yang, Bing; Jiang, Xin
作者单位	1.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China USTC, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany
推荐引用方式 GB/T 7714	Lu, Jiaqi,Yang, Bing,Li, Haining,et al. Revealing impurity evolution in silicon-doped diamond film via thermal oxidation[J]. CARBON,2023,203:337-346.
APA	Lu, Jiaqi.,Yang, Bing.,Li, Haining.,Guo, Xiaokun.,Huang, Nan.,...&Jiang, Xin.(2023).Revealing impurity evolution in silicon-doped diamond film via thermal oxidation.CARBON,203,337-346.
MLA	Lu, Jiaqi,et al."Revealing impurity evolution in silicon-doped diamond film via thermal oxidation".CARBON 203(2023):337-346.