Realization of chiral multifold semimetal RhSi crystalline thin films

doi:10.1103/PhysRevMaterials.7.054201

IMR OpenIR

	Realization of chiral multifold semimetal RhSi crystalline thin films
	Lv, Hua 1,4; Lesne, Edouard 1; Ibarra, Rebeca 1; Sun, Yan 2; Markou, Anastasios 1,3; Felser, Claudia 1
通讯作者	Lesne, Edouard(Edouard.Lesne@cpfs.mpg.de) ; Markou, Anastasios(Anastasios.Markou@cpfs.mpg.de) ; Felser, Claudia(Claudia.Felser@cpfs.mpg.de)
	2023-05-26
发表期刊	PHYSICAL REVIEW MATERIALS
ISSN	2475-9953
卷号	7 期号:5 页码:6
摘要	Nonmagnetic topological semimetals that combine chirality in real and momentum spaces host unconventional multifold fermions and exhibit exotic electronic and optical properties endowed by their topologically nontrivial electronic band structure. Although the synthesis of nonmagnetic chiral single crystals with a noncentrosym-metric cubic B20 structure is well established, their heteroepitaxial growth in crystalline thin films remains a notable challenge. In this study, we present the structural, magnetic, and electrical magnetotransport properties of 24-and 51-nm-thick films of a B20-RhSi stoichiometric compound grown by magnetron sputtering. RhSi crystalline thin films on Si (111) single-crystal substrates exhibit a preferred (111) orientation with twin domains. The RhSi films display a nonmagnetic ground state, and their electrical resistivity demonstrates a clear and nonsaturating metallic behavior from 300 to 5 K. Magnetotransport measurements reveal that hole-type carriers dominate the Hall response with multiband contributions to electronic transport in the system. The good agree-ment with the Bloch-Gruneisen model and our first-principles calculations confirms that temperature-dependent electrical resistivity is governed by electron-phonon scattering. The ability to grow textured-epitaxial thin films of nonmagnetic B20 chiral topological semimetals is an important step toward accessing and controlling their remarkable topological surface states for designing chiraltronic devices with novel optoelectronic or spintronic functionalities.
资助者	Horizon 2020 FETPROAC ; Saechsische Aufbaubank-Foerderbank- (SAB)
DOI	10.1103/PhysRevMaterials.7.054201
收录类别	SCI
语种	英语
资助项目	Horizon 2020 FETPROAC[824123] ; Saechsische Aufbaubank-Foerderbank- (SAB)[4188]
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:001003883500003
出版者	AMER PHYSICAL SOC
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/178433
专题	中国科学院金属研究所
通讯作者	Lesne, Edouard; Markou, Anastasios; Felser, Claudia
作者单位	1.Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany 2.Chinese Acad Sci, Inst Met Res, Shenyang, Peoples R China 3.Univ Ioannina, Phys Dept, Ioannina 45110, Greece 4.Leibniz Inst Forsch Verbund Berlin eV, Paul Drude Inst Festkorperelektron, Hausvogteipl 5-7, D-10117 Berlin, Germany
推荐引用方式 GB/T 7714	Lv, Hua,Lesne, Edouard,Ibarra, Rebeca,et al. Realization of chiral multifold semimetal RhSi crystalline thin films[J]. PHYSICAL REVIEW MATERIALS,2023,7(5):6.
APA	Lv, Hua,Lesne, Edouard,Ibarra, Rebeca,Sun, Yan,Markou, Anastasios,&Felser, Claudia.(2023).Realization of chiral multifold semimetal RhSi crystalline thin films.PHYSICAL REVIEW MATERIALS,7(5),6.
MLA	Lv, Hua,et al."Realization of chiral multifold semimetal RhSi crystalline thin films".PHYSICAL REVIEW MATERIALS 7.5(2023):6.