Defects boost graphitization for highly conductive graphene films

doi:10.1093/nsr/nwad147

IMR OpenIR

	Defects boost graphitization for highly conductive graphene films
	Zhang, Qing 1,2; Wei, Qinwei 1,2; Huang, Kun 1,2; Liu, Zhibo 1,2; Ma, Wei 1,2; Zhang, Zehui 3; Zhang, Yanfeng 3; Cheng, Hui-Ming 1,2,4; Ren, Wencai 1,2
通讯作者	Ren, Wencai(wcren@imr.ac.cn)
	2023-05-31
发表期刊	NATIONAL SCIENCE REVIEW
ISSN	2095-5138
卷号	10 期号:7 页码:11
摘要	Fabricating highly crystalline macroscopic films with extraordinary electrical and thermal conductivities from graphene sheets is essential for applications in electronics, telecommunications and thermal management. High-temperature graphitization is the only method known to date for the crystallization of all types of carbon materials, where defects are gradually removed with increasing temperature. However, when using graphene materials as precursors, including graphene oxide, reduced graphene oxide and pristine graphene, even lengthy graphitization at 3000 & DEG;C can only produce graphene films with small grain sizes and abundant structural disorders, which limit their conductivities. Here, we show that high-temperature defects substantially accelerate the grain growth and ordering of graphene films during graphitization, enabling ideal AB stacking as well as a 100-fold, 64-fold and 28-fold improvement in grain size, electrical conductivity and thermal conductivity, respectively, between 2000 & DEG;C and 3000 & DEG;C. This process is realized by nitrogen doping, which retards the lattice restoration of defective graphene, retaining abundant defects such as vacancies, dislocations and grain boundaries in graphene films at a high temperature. With this approach, a highly ordered crystalline graphene film similar to highly oriented pyrolytic graphite is fabricated, with electrical and thermal conductivities (& SIM;2.0 x 10(4) S cm(-1); & SIM;1.7 x 10(3) W m(-1) K-1) that are improved by about 6- and 2-fold, respectively, compared to those of the graphene films fabricated by graphene oxide. Such graphene film also exhibits a superhigh electromagnetic interference shielding effectiveness of & SIM;90 dB at a thickness of 10 & mu;m, outperforming all the synthetic materials of comparable thickness including MXene films. This work not only paves the way for the technological application of highly conductive graphene films but also provides a general strategy to efficiently improve the synthesis and properties of other carbon materials such as graphene fibers, carbon nanotube fibers, carbon fibers, polymer-derived graphite and highly oriented pyrolytic graphite. The high-temperature defects induced by nitrogen doping significantly accelerate the grain growth and ordering of graphene films during graphitization, enabling highly-oriented-pyrolytic-graphite-like highly conductive films.
关键词	graphene film defects graphitization electrical and thermal conductivity thermal management and EMI shielding
资助者	National Key Ramp;D Program of the Ministry of Science and Technology of China ; National Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; LiaoNing Revitalization Talents Program ; Guangdong Basic and Applied Basic Research Foundation ; Youth Innovation Promotion Association, Chinese Academy of Sciences
DOI	10.1093/nsr/nwad147
收录类别	SCI
语种	英语
资助项目	National Key Ramp;D Program of the Ministry of Science and Technology of China[2022YFA1205301] ; National Key Ramp;D Program of the Ministry of Science and Technology of China[2022YFA1205300] ; National Natural Science Foundation of China[52188101] ; National Natural Science Foundation of China[52272050] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; LiaoNing Revitalization Talents Program[XLYC1808013] ; Guangdong Basic and Applied Basic Research Foundation[2020B0301030002] ; Youth Innovation Promotion Association, Chinese Academy of Sciences[2021000185]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:001022059200001
出版者	OXFORD UNIV PRESS
引用统计	被引频次：19[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/178475
专题	中国科学院金属研究所
通讯作者	Ren, Wencai
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China 4.Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Qing,Wei, Qinwei,Huang, Kun,et al. Defects boost graphitization for highly conductive graphene films[J]. NATIONAL SCIENCE REVIEW,2023,10(7):11.
APA	Zhang, Qing.,Wei, Qinwei.,Huang, Kun.,Liu, Zhibo.,Ma, Wei.,...&Ren, Wencai.(2023).Defects boost graphitization for highly conductive graphene films.NATIONAL SCIENCE REVIEW,10(7),11.
MLA	Zhang, Qing,et al."Defects boost graphitization for highly conductive graphene films".NATIONAL SCIENCE REVIEW 10.7(2023):11.