| Defects boost graphitization for highly conductive graphene films | |
| Zhang, Qing1,2; Wei, Qinwei1,2; Huang, Kun1,2; Liu, Zhibo1,2; Ma, Wei1,2; Zhang, Zehui3; Zhang, Yanfeng3; Cheng, Hui-Ming1,2,4; Ren, Wencai1,2 | |
| Corresponding Author | Ren, Wencai(wcren@imr.ac.cn) |
| 2023-05-31 | |
| Source Publication | NATIONAL SCIENCE REVIEW
 |
| ISSN | 2095-5138 |
| Volume | 10Issue:7Pages:11 |
| Abstract | Fabricating highly crystalline macroscopic films with extraordinary electrical and thermal conductivities from graphene sheets is essential for applications in electronics, telecommunications and thermal management. High-temperature graphitization is the only method known to date for the crystallization of all types of carbon materials, where defects are gradually removed with increasing temperature. However, when using graphene materials as precursors, including graphene oxide, reduced graphene oxide and pristine graphene, even lengthy graphitization at 3000 & DEG;C can only produce graphene films with small grain sizes and abundant structural disorders, which limit their conductivities. Here, we show that high-temperature defects substantially accelerate the grain growth and ordering of graphene films during graphitization, enabling ideal AB stacking as well as a 100-fold, 64-fold and 28-fold improvement in grain size, electrical conductivity and thermal conductivity, respectively, between 2000 & DEG;C and 3000 & DEG;C. This process is realized by nitrogen doping, which retards the lattice restoration of defective graphene, retaining abundant defects such as vacancies, dislocations and grain boundaries in graphene films at a high temperature. With this approach, a highly ordered crystalline graphene film similar to highly oriented pyrolytic graphite is fabricated, with electrical and thermal conductivities (& SIM;2.0 x 10(4) S cm(-1); & SIM;1.7 x 10(3) W m(-1) K-1) that are improved by about 6- and 2-fold, respectively, compared to those of the graphene films fabricated by graphene oxide. Such graphene film also exhibits a superhigh electromagnetic interference shielding effectiveness of & SIM;90 dB at a thickness of 10 & mu;m, outperforming all the synthetic materials of comparable thickness including MXene films. This work not only paves the way for the technological application of highly conductive graphene films but also provides a general strategy to efficiently improve the synthesis and properties of other carbon materials such as graphene fibers, carbon nanotube fibers, carbon fibers, polymer-derived graphite and highly oriented pyrolytic graphite. The high-temperature defects induced by nitrogen doping significantly accelerate the grain growth and ordering of graphene films during graphitization, enabling highly-oriented-pyrolytic-graphite-like highly conductive films. |
| Keyword | graphene film defects graphitization electrical and thermal conductivity thermal management and EMI shielding |
| Funding Organization | National Key Ramp;D Program of the Ministry of Science and Technology of China ; National Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; LiaoNing Revitalization Talents Program ; Guangdong Basic and Applied Basic Research Foundation ; Youth Innovation Promotion Association, Chinese Academy of Sciences |
| DOI | 10.1093/nsr/nwad147 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Key Ramp;D Program of the Ministry of Science and Technology of China[2022YFA1205301] ; National Key Ramp;D Program of the Ministry of Science and Technology of China[2022YFA1205300] ; National Natural Science Foundation of China[52188101] ; National Natural Science Foundation of China[52272050] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; LiaoNing Revitalization Talents Program[XLYC1808013] ; Guangdong Basic and Applied Basic Research Foundation[2020B0301030002] ; Youth Innovation Promotion Association, Chinese Academy of Sciences[2021000185] |
| WOS Research Area | Science & Technology - Other Topics |
| WOS Subject | Multidisciplinary Sciences |
| WOS ID | WOS:001022059200001 |
| Publisher | OXFORD UNIV PRESS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/178475 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Ren, Wencai |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China 4.Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China |
| Recommended Citation GB/T 7714 | Zhang, Qing,Wei, Qinwei,Huang, Kun,et al. Defects boost graphitization for highly conductive graphene films[J]. NATIONAL SCIENCE REVIEW,2023,10(7):11. |
| APA | Zhang, Qing.,Wei, Qinwei.,Huang, Kun.,Liu, Zhibo.,Ma, Wei.,...&Ren, Wencai.(2023).Defects boost graphitization for highly conductive graphene films.NATIONAL SCIENCE REVIEW,10(7),11. |
| MLA | Zhang, Qing,et al."Defects boost graphitization for highly conductive graphene films".NATIONAL SCIENCE REVIEW 10.7(2023):11. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment