In-plane charged domain walls with memristive behaviour in a ferroelectric film

doi:10.1038/s41586-022-05503-5

IMR OpenIR

	In-plane charged domain walls with memristive behaviour in a ferroelectric film
	Liu, Zhongran 1; Wang, Han 2,3; Li, Ming 4,5; Tao, Lingling 4,5; Paudel, Tula R.4,5,6; Yu, Hongyang 1; Wang, Yuxuan 1; Hong, Siyuan 7; Zhang, Meng 7; Ren, Zhaohui 8; Xie, Yanwu 7; Tsymbal, Evgeny Y.4,5; Chen, Jingsheng 2; Zhang, Ze 1,8; Tian, He 1,8,9
通讯作者	Tsymbal, Evgeny Y.(tsymbal@unl.edu) ; Chen, Jingsheng(msecj@nus.edu.sg) ; Zhang, Ze(zezhang@zju.edu.cn) ; Tian, He(hetian@zju.edu.cn)
	2023-01-18
发表期刊	NATURE
ISSN	0028-0836
页码	21
摘要	Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices. The direct observation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick, their deterministic creation, manipulation and annihilation by applied voltage, as well the demonstration of their memristive functionality is reported.
资助者	National Key R&D Programme of China ; National Natural Science Foundation of China ; China Postdoctoral Science Foundation ; Fundamental Research Funds for the Central Universities ; Zhejiang Provincial Natural Science Foundation ; Singapore Ministry of Education ; RIE2020 Advanced Manufacturing and Engineering (AME) Programmatic Grant ; Singapore National Research Foundation under a CRP Award ; National Science Foundation (NSF) through the EPSCoR RII Track-1 ; MRSEC (NSF)
DOI	10.1038/s41586-022-05503-5
收录类别	SCI
语种	英语
资助项目	National Key R&D Programme of China[2021YFA1500800] ; National Natural Science Foundation of China[U21A2067] ; China Postdoctoral Science Foundation[2022M722716] ; Fundamental Research Funds for the Central Universities ; Zhejiang Provincial Natural Science Foundation[LD21E020002] ; Zhejiang Provincial Natural Science Foundation[LR21E020004] ; Singapore Ministry of Education[MOET2EP50121-0024] ; Singapore Ministry of Education[MOE Tier 1-22-4888-A0001] ; RIE2020 Advanced Manufacturing and Engineering (AME) Programmatic Grant[A20G9b0135] ; Singapore National Research Foundation under a CRP Award[NRF-CRP23-2019-0070] ; National Science Foundation (NSF) through the EPSCoR RII Track-1[OIA-2044049] ; MRSEC (NSF)[DMR-1420645]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000979948200002
出版者	NATURE PORTFOLIO
引用统计	被引频次：42[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/178529
专题	中国科学院金属研究所
通讯作者	Tsymbal, Evgeny Y.; Chen, Jingsheng; Zhang, Ze; Tian, He
作者单位	1.Zhejiang Univ, Ctr Electron Microscopy, Sch Mat Sci & Engn, Hangzhou, Peoples R China 2.Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China 4.Univ Nebraska Lincoln, Dept Phys & Astron, Lincoln, NE 68588 USA 5.Univ Nebraska Lincoln, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA 6.South Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD USA 7.Zhejiang Univ, Dept Phys, Hangzhou, Peoples R China 8.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou, Peoples R China 9.Zhengzhou Univ, Sch Phys & Microelect, Zhengzhou, Peoples R China
推荐引用方式 GB/T 7714	Liu, Zhongran,Wang, Han,Li, Ming,et al. In-plane charged domain walls with memristive behaviour in a ferroelectric film[J]. NATURE,2023:21.
APA	Liu, Zhongran.,Wang, Han.,Li, Ming.,Tao, Lingling.,Paudel, Tula R..,...&Tian, He.(2023).In-plane charged domain walls with memristive behaviour in a ferroelectric film.NATURE,21.
MLA	Liu, Zhongran,et al."In-plane charged domain walls with memristive behaviour in a ferroelectric film".NATURE (2023):21.