| Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching | |
| Huang, Biaohong1,2; Zhao, Xuefeng3; Li, Xiaoqi1,2; Li, Lingli1,2; Xie, Zhongshuai4; Wang, Di3; Feng, Dingshuai1,2; Jiang, Yuxuan1,2; Liu, Jingyan1,2; Li, Yizhuo1; Yuan, Guoliang4; Han, Zheng1; Paudel, Tula R.5; Xing, Guozhong3; Hu, Weijin1,2; Zhang, Zhidong1 | |
| Corresponding Author | Xing, Guozhong(gzxing@ime.ac.cn) ; Hu, Weijin(wjhu@imr.ac.cn) |
| 2023-06-26 | |
| Source Publication | ACS NANO
 |
| ISSN | 1936-0851 |
| Volume | 17Issue:13Pages:12347-12357 |
| Abstract | Controllingthe domain evolution is critical both for optimizingferroelectric properties and for designing functional electronic devices.Here we report an approach of using the Schottky barrier formed atthe metal/ferroelectric interface to tailor the self-polarizationstates of a model ferroelectric thin film heterostructure system SrRuO3/(Bi,Sm)FeO3. Upon complementary investigationsof the piezoresponse force microscopy, electric transport measurements,X-ray photoelectron/absorption spectra, and theoretical studies, wedemonstrate that Sm doping changes the concentration and spatial distributionof oxygen vacancies with the tunable host Fermi level which modulatesthe SrRuO3/(Bi,Sm)FeO3 Schottky barrier andthe depolarization field, leading to the evolution of the system froma single domain of downward polarization to polydomain states. Accompaniedby such modulation on self-polarization, we further tailor the symmetryof the resistive switching behaviors and achieve a colossal on/offratio of similar to 1.1 x 10(6) in the corresponding SrRuO3/BiFeO3/Pt ferroelectric diodes (FDs). In addition,the present FD also exhibits a fast operation speed of similar to 30ns with a potential for sub-nanosecond and an ultralow writing currentdensity of similar to 132 A/cm(2). Our studies provide a wayfor engineering self-polarization and reveal its strong link to thedevice performance, facilitating FDs as a competitive memristor candidateused for neuromorphic computing. |
| Keyword | self-polarization Schottky barrier oxygenvacancy BiFeO3 ferroelectric diode |
| Funding Organization | National Natural Science Foundation of China ; National Key Ramp;D Program ; Strategic Priority Research Program of CAS |
| DOI | 10.1021/acsnano.3c01548 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[62074164] ; National Natural Science Foundation of China[61974147] ; National Natural Science Foundation of China[52031014] ; National Key Ramp;D Program[2021YFB360130] ; National Key Ramp;D Program[2019YFB2205100] ; Strategic Priority Research Program of CAS[XDB44010100] |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS ID | WOS:001018116600001 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/178550 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Xing, Guozhong; Hu, Weijin |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China USTC, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Univ Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100049, Peoples R China 4.Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Peoples R China 5.South Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD 57701 USA |
| Recommended Citation GB/T 7714 | Huang, Biaohong,Zhao, Xuefeng,Li, Xiaoqi,et al. Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching[J]. ACS NANO,2023,17(13):12347-12357. |
| APA | Huang, Biaohong.,Zhao, Xuefeng.,Li, Xiaoqi.,Li, Lingli.,Xie, Zhongshuai.,...&Zhang, Zhidong.(2023).Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching.ACS NANO,17(13),12347-12357. |
| MLA | Huang, Biaohong,et al."Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching".ACS NANO 17.13(2023):12347-12357. |
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