In situ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag2S

doi:10.1063/5.0158607

IMR OpenIR

	In situ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag2S
	Wang, Yanxu 1; Gong, Wu 2; Kawasaki, Takuro 2; Harjo, Stefanus 2; Zhang, Kun 1; Zhang, Zhidong 1; Li, Bing 1
通讯作者	Li, Bing(bingli@imr.ac.cn)
	2023-07-03
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	123 期号:1 页码:6
摘要	Bulk Ag2S is a plastic inorganic semiconductor at room temperature. It exhibits a compressive strain greater than 50%, which is highly different from brittle conventional counterparts, such as silicon. Here, we present the experimental investigation of the deformation behavior in a plastic inorganic semiconductor Ag2S using in situ neutron diffraction during compressive deformation at room and elevated temperatures. At room temperature, the lattice strain partitioning among hkl-orientated grain families could be responsible for the significant work-hardening behavior in the bulk Ag2S with a monoclinic structure. The rapid accumulation of lattice defects and remarkable development of the deformation texture suggest that dislocation slip promotes plasticity. At 453 K, a monoclinic phase transforms into a body-centered cubic phase. A stress plateau appears at similar to-4.8 MPa, followed by a rehardening state. The deformation mode of bulk Ag2S at the initial stage is likely attributable to the migration of silver ions, and as strain increases, it is closer to that of room temperature, leading to rehardening.
资助者	Ministry of Science and Technology of China ; National Natural Science Foundation of China ; Young Talent Program of SYNL
DOI	10.1063/5.0158607
收录类别	SCI
语种	英语
资助项目	Ministry of Science and Technology of China[2022YFE0109900] ; National Natural Science Foundation of China[11934007] ; Young Talent Program of SYNL
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001025214300007
出版者	AIP Publishing
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/178634
专题	中国科学院金属研究所
通讯作者	Li, Bing
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Japan Atom Energy Agcy, J PARC Ctr, 2-4 Shirane, Ibaraki, 3191195, Japan
推荐引用方式 GB/T 7714	Wang, Yanxu,Gong, Wu,Kawasaki, Takuro,et al. In situ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag2S[J]. APPLIED PHYSICS LETTERS,2023,123(1):6.
APA	Wang, Yanxu.,Gong, Wu.,Kawasaki, Takuro.,Harjo, Stefanus.,Zhang, Kun.,...&Li, Bing.(2023).In situ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag2S.APPLIED PHYSICS LETTERS,123(1),6.
MLA	Wang, Yanxu,et al."In situ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag2S".APPLIED PHYSICS LETTERS 123.1(2023):6.