High-Performance Sb-Doped GeTe Thermoelectric Thin Film and Device

doi:10.1007/s40195-023-01584-x

IMR OpenIR

	High-Performance Sb-Doped GeTe Thermoelectric Thin Film and Device
	Hu, Zhenqing 1,2; Yu, Hailong 1,2; He, Juan 1,2; Ran, Yijun 1,2; Zeng, Hao 1,2; Zhao, Yang 2; Yu, Zhi 2; Tai, Kaiping 1,2
通讯作者	Tai, Kaiping(kptai@imr.ac.cn)
	2023-07-26
发表期刊	ACTA METALLURGICA SINICA-ENGLISH LETTERS
ISSN	1006-7191
页码	10
摘要	GeTe-based materials have attracted significant attention as high-efficiency thermoelectric materials for mid-temperature applications. However, GeTe thin-film materials with thermoelectric performances comparable to that of their bulk counterparts have not yet been reported, because of their unsatisfactory electrical and thermal properties caused by their poor crystal quality and high carrier concentration. Herein, a series of Sb-doped GeTe films and devices with remarkable thermoelectric performances are presented. These films are prepared through magnetron sputtering deposition at 553 K and exhibit a unique microstructure that consists of coarse- and fine-sized grains with high crystallization quality. The fine grains enhance the scattering associated with phonon transport and the coarse grains provide electron transport channels, which can suppress the thermal conductivity without obviously sacrificing the electrical conductivity. Moreover, Sb doping can effectively optimize the carrier concentration and increase the carrier effective mass, while introducing point defects and stacking faults to further scatter the phonon transport and decrease the thermal conductivity. Consequently, a peak power factor of 22.37 & mu;W cm(-1) K-2 is obtained at 703 K and a maximum thermoelectric figure of merit of 1.53 is achieved at 673 K, which are substantially larger than the values reported in the existing literature. A flexible thermoelectric generator is designed and fabricated using Sb-doped GeTe films deposited on polyimide and achieves a maximum output power density of 2.22 x 10(3) W m(-2) for a temperature difference of 300 K.
关键词	Thermoelectric thin film GeTe-based materials Sb doping Carrier concentration Thermoelectric generator
资助者	Ministry of Science and Technology of China ; National Natural Science Foundation of China ; Liaoning Province Science and Technology Plan Project ; Science Fund for Distinguished Young Scholars of Liaoning Province ; Science and Technology Plan Projects of Shenyang
DOI	10.1007/s40195-023-01584-x
收录类别	SCI
语种	英语
资助项目	Ministry of Science and Technology of China[2017YFA0700702] ; Ministry of Science and Technology of China[2017YFA0700705] ; National Natural Science Foundation of China[52073290] ; National Natural Science Foundation of China[51927803] ; Liaoning Province Science and Technology Plan Project[2022-MS-011] ; Science Fund for Distinguished Young Scholars of Liaoning Province[2023JH6/100500004] ; Science and Technology Plan Projects of Shenyang[21108901]
WOS研究方向	Metallurgy & Metallurgical Engineering
WOS类目	Metallurgy & Metallurgical Engineering
WOS记录号	WOS:001034209400002
出版者	CHINESE ACAD SCIENCES, INST METAL RESEARCH
引用统计	被引频次：14[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/178721
专题	中国科学院金属研究所
通讯作者	Tai, Kaiping
作者单位	1.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Hu, Zhenqing,Yu, Hailong,He, Juan,et al. High-Performance Sb-Doped GeTe Thermoelectric Thin Film and Device[J]. ACTA METALLURGICA SINICA-ENGLISH LETTERS,2023:10.
APA	Hu, Zhenqing.,Yu, Hailong.,He, Juan.,Ran, Yijun.,Zeng, Hao.,...&Tai, Kaiping.(2023).High-Performance Sb-Doped GeTe Thermoelectric Thin Film and Device.ACTA METALLURGICA SINICA-ENGLISH LETTERS,10.
MLA	Hu, Zhenqing,et al."High-Performance Sb-Doped GeTe Thermoelectric Thin Film and Device".ACTA METALLURGICA SINICA-ENGLISH LETTERS (2023):10.