Voltage-gated field-free spin-orbit torque switching in Pt/Co/Ir/MgO wedged structures

doi:10.1063/5.0157986

IMR OpenIR

	Voltage-gated field-free spin-orbit torque switching in Pt/Co/Ir/MgO wedged structures
	Li, Yang 1,2; Zhao, Xiaotian 1; Liu, Wei 1; Wu, Jinxiang 1,2; Liu, Long 1; Song, Yuhang 1,2; Ma, Jun 1,2; Zhang, Zhidong 1
通讯作者	Zhao, Xiaotian(xtzhao@imr.ac.cn) ; Liu, Wei(wliu@imr.ac.cn)
	2023-07-17
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	123 期号:3 页码:7
摘要	The ability to efficiently manipulate magnetization is of great significance for practical applications of spin-orbit torque (SOT) devices. In this study, we report the voltage-controlled, field-free SOT switching in perpendicular magnetized Pt/Co/Ir/MgO structures with wedge iridium interlayers. The insertion of a thin iridium interlayer at ferromagnet/oxide can significantly reduce the perpendicular magnetic anisotropy depending on the Ir thickness. The wedging of the iridium layer breaks lateral structural symmetry, resulting in deterministic switching without the assistance of in-plane magnetic fields. In such a structure, the SOT critical switching currents are remarkably decreased by 29% when a positive 6 V gate voltage is applied. Further quantitative analysis shows that multiple factors contribute to the decrease in switching currents, including a 23% reduction in magnetic anisotropy energy, a reduction in nucleation field, and a minor enhancement in damping-like torque under gate voltage. Moreover, the probabilistic hindrance that gate voltage poses to field-free switching is revealed by the decrease in current-induced perpendicular effective fields from symmetry-breaking. Our research shows that energy-efficient SOT switching can be controlled by gating and offers insight into the mechanism behind voltage-gated SOT switching.
资助者	National Natural Science Foundation of China
DOI	10.1063/5.0157986
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[52031014] ; National Natural Science Foundation of China[52171196]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001031779000005
出版者	AIP Publishing
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/178865
专题	中国科学院金属研究所
通讯作者	Zhao, Xiaotian; Liu, Wei
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Li, Yang,Zhao, Xiaotian,Liu, Wei,et al. Voltage-gated field-free spin-orbit torque switching in Pt/Co/Ir/MgO wedged structures[J]. APPLIED PHYSICS LETTERS,2023,123(3):7.
APA	Li, Yang.,Zhao, Xiaotian.,Liu, Wei.,Wu, Jinxiang.,Liu, Long.,...&Zhang, Zhidong.(2023).Voltage-gated field-free spin-orbit torque switching in Pt/Co/Ir/MgO wedged structures.APPLIED PHYSICS LETTERS,123(3),7.
MLA	Li, Yang,et al."Voltage-gated field-free spin-orbit torque switching in Pt/Co/Ir/MgO wedged structures".APPLIED PHYSICS LETTERS 123.3(2023):7.