Single-dislocation ultraviolet light emission

doi:10.1016/j.actamat.2023.119169

IMR OpenIR

	Single-dislocation ultraviolet light emission
	Yan, Xuexi 1; Jin, Qianqian 2; Jiang, Yixiao 1; Yao, Tingting 1; Wang, Xinwei 1; Li, Xiang 1; Gao, Chunyang 1; Chen, Chunlin 1,3; Ye, Hengqiang 3; Ma, Xiu-Liang 1,4,5
通讯作者	Jiang, Yixiao(yxjiang11s@imr.ac.cn) ; Chen, Chunlin(clchen@imr.ac.cn)
	2023-09-15
发表期刊	ACTA MATERIALIA
ISSN	1359-6454
卷号	257 页码:9
摘要	Micro-nano ultraviolet light sources have recently attracted great attention due to their promising applications in future quantum display, photoelectric detection sensors, biomedical devices, and so on. Design of ultraviolet light sources with smaller size, stronger emission intensity, and higher integration, are the key aspects for the development of high-performance micro-nano ultraviolet devices. Here, we demonstrate that unidirectional threading dislocation arrays in an AlN thin film can emit ultraviolet light with wavelength of - 317 nm. The density of AlN dislocations is - 4 x 1010 cm-2, and the light emission intensity of AlN dislocations is comparable to the intrinsic emission of the AlN thin film. By combining aberration-corrected transmission electron microscopy, atomic-resolution valence electron energy-loss spectroscopy, and first-principles calculations, the atomic and electronic structures and the band gaps of the AlN threading dislocations are determined. It is found that the AlN threading dislocations are comprised of edge, screw, and mixed dislocations. All the AlN dislocations exhibit smaller band gaps compared to the AlN bulk due to the increase of the Al-N bond length at the dislocation cores. The dangling bonds of Al and N at the edge dislocations, Al-Al and N-N bonds at the screw dislocations cause the defect states in the band gaps. This study not only has clarified the atomic origin of dislocation nano-optics, but also will encourage the development of microelectronics and optoelectronic devices based on dislocation ultraviolet light emission.
关键词	Threading dislocations Band gap Transmission electron microscopy Electron energy-loss spectroscopy First-principles calculations Cathodoluminescence AlN
资助者	National Natural Science Foundation of China ; Basic and Applied Basic Research Major Programme of Guangdong Province, China ; CAS Interdisciplinary Innovation Team ; Key Research Program of Frontier Sciences, CAS
DOI	10.1016/j.actamat.2023.119169
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[52125101] ; National Natural Science Foundation of China[51971224] ; National Natural Science Foundation of China[52001309] ; Basic and Applied Basic Research Major Programme of Guangdong Province, China[292020000008] ; CAS Interdisciplinary Innovation Team[QYZDY-SSW-JSC027] ; Key Research Program of Frontier Sciences, CAS[X210141TL210] ; [2021B0301030003]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:001047129600001
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/178973
专题	中国科学院金属研究所
通讯作者	Jiang, Yixiao; Chen, Chunlin
作者单位	1.Univ Sci & Technol China, Inst Met Res, Chinese Acad Sci, Sch Mat Sci & Engn,Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Guangxi Univ Sci & Technol, Ctr Struct Adv Matter, Sch Elect Engn, Liuzhou 545006, Peoples R China 3.Ji Hua Lab, Foshan 528200, Peoples R China 4.Bay Area Ctr Electron Microscopy, Songshan Lake Mat Lab, Dongguan 523808, Peoples R China 5.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Yan, Xuexi,Jin, Qianqian,Jiang, Yixiao,et al. Single-dislocation ultraviolet light emission[J]. ACTA MATERIALIA,2023,257:9.
APA	Yan, Xuexi.,Jin, Qianqian.,Jiang, Yixiao.,Yao, Tingting.,Wang, Xinwei.,...&Ma, Xiu-Liang.(2023).Single-dislocation ultraviolet light emission.ACTA MATERIALIA,257,9.
MLA	Yan, Xuexi,et al."Single-dislocation ultraviolet light emission".ACTA MATERIALIA 257(2023):9.