| Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films | |
| Yu, Guoliang1; Tang, Chuhan1; Tian, Zhiqiang1; Zhu, Ziming1; Liu, Peitao2,3; Pan, Anlian4; Chen, Mingxing1; Chen, Xing-Qiu2,3 | |
| Corresponding Author | Chen, Mingxing(mxchen@hunnu.edu.cn) |
| 2023-07-12 | |
| Source Publication | PHYSICAL REVIEW B
 |
| ISSN | 2469-9950 |
| Volume | 108Issue:1Pages:9 |
| Abstract | Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low-energy consumption. The newly discovered layered MnBi2Te4(Bi2Te3)n and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically manipulating the interlayer magnetic couplings based on the Heisenberg model and first-principles calculations. Our strategy relies on the fact that interfacing the thin films with appropriate ferroelectric materials can switch on/off an interlayer hopping channel between Mn-eg orbitals as the polarizations reversed, thus resulting in a switchable interlayer antiferromagnetism-toferromagnetism transition. On the other hand, the interface effect leads to asymmetric energy barrier heights for the two polarization states. These properties allow us to build ferroelectrically switchable triple and quadruple magnetic states with multiple Chern numbers in thin films. Our study reveals that ferroelectrically switchable magnetic and topological multistates in the MnBi2Te4 family can be obtained by rational design for multifunctional electronic devices, which can also be applied to other two-dimensional magnetic materials. |
| Funding Organization | National Natural Science Foundation of China ; State Key Laboratory of Powder Metallurgy, Central South University, Changsha, China |
| DOI | 10.1103/PhysRevB.108.014106 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[11774084] ; National Natural Science Foundation of China[U19A2090] ; National Natural Science Foundation of China[91833302] ; State Key Laboratory of Powder Metallurgy, Central South University, Changsha, China ; [12174098] |
| WOS Research Area | Materials Science ; Physics |
| WOS Subject | Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:001059714200003 |
| Publisher | AMER PHYSICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/179102 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Chen, Mingxing |
| Affiliation | 1.Hunan Normal Univ, Sch Phys & Elect, Key Lab Matter Microstruct & Funct Hunan Prov, Key Lab Low Dimens Quantum Struct & Quantum Contro, Changsha 410081, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 4.Hunan Univ, Coll Mat Sci & Engn, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Peoples R China |
| Recommended Citation GB/T 7714 | Yu, Guoliang,Tang, Chuhan,Tian, Zhiqiang,et al. Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films[J]. PHYSICAL REVIEW B,2023,108(1):9. |
| APA | Yu, Guoliang.,Tang, Chuhan.,Tian, Zhiqiang.,Zhu, Ziming.,Liu, Peitao.,...&Chen, Xing-Qiu.(2023).Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films.PHYSICAL REVIEW B,108(1),9. |
| MLA | Yu, Guoliang,et al."Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films".PHYSICAL REVIEW B 108.1(2023):9. |
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