Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films

doi:10.1103/PhysRevB.108.014106

IMR OpenIR

	Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films
	Yu, Guoliang 1; Tang, Chuhan 1; Tian, Zhiqiang 1; Zhu, Ziming 1; Liu, Peitao 2,3; Pan, Anlian 4; Chen, Mingxing 1; Chen, Xing-Qiu 2,3
通讯作者	Chen, Mingxing(mxchen@hunnu.edu.cn)
	2023-07-12
发表期刊	PHYSICAL REVIEW B
ISSN	2469-9950
卷号	108 期号:1 页码:9
摘要	Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low-energy consumption. The newly discovered layered MnBi2Te4(Bi2Te3)n and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically manipulating the interlayer magnetic couplings based on the Heisenberg model and first-principles calculations. Our strategy relies on the fact that interfacing the thin films with appropriate ferroelectric materials can switch on/off an interlayer hopping channel between Mn-eg orbitals as the polarizations reversed, thus resulting in a switchable interlayer antiferromagnetism-toferromagnetism transition. On the other hand, the interface effect leads to asymmetric energy barrier heights for the two polarization states. These properties allow us to build ferroelectrically switchable triple and quadruple magnetic states with multiple Chern numbers in thin films. Our study reveals that ferroelectrically switchable magnetic and topological multistates in the MnBi2Te4 family can be obtained by rational design for multifunctional electronic devices, which can also be applied to other two-dimensional magnetic materials.
资助者	National Natural Science Foundation of China ; State Key Laboratory of Powder Metallurgy, Central South University, Changsha, China
DOI	10.1103/PhysRevB.108.014106
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[11774084] ; National Natural Science Foundation of China[U19A2090] ; National Natural Science Foundation of China[91833302] ; State Key Laboratory of Powder Metallurgy, Central South University, Changsha, China ; [12174098]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001059714200003
出版者	AMER PHYSICAL SOC
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/179102
专题	中国科学院金属研究所
通讯作者	Chen, Mingxing
作者单位	1.Hunan Normal Univ, Sch Phys & Elect, Key Lab Matter Microstruct & Funct Hunan Prov, Key Lab Low Dimens Quantum Struct & Quantum Contro, Changsha 410081, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 4.Hunan Univ, Coll Mat Sci & Engn, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Peoples R China
推荐引用方式 GB/T 7714	Yu, Guoliang,Tang, Chuhan,Tian, Zhiqiang,et al. Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films[J]. PHYSICAL REVIEW B,2023,108(1):9.
APA	Yu, Guoliang.,Tang, Chuhan.,Tian, Zhiqiang.,Zhu, Ziming.,Liu, Peitao.,...&Chen, Xing-Qiu.(2023).Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films.PHYSICAL REVIEW B,108(1),9.
MLA	Yu, Guoliang,et al."Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films".PHYSICAL REVIEW B 108.1(2023):9.