Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films

doi:10.1016/j.jallcom.2023.171832

IMR OpenIR

	Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films
	Yue, Zhi Yun 1,2; Zhang, Zhi Dong 1,2; Wang, Zhan Jie 3
通讯作者	Wang, Zhan Jie(wangzj@imr.ac.cn)
	2023-12-15
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	968 页码:7
摘要	The ferroelectric memristor, as a new type of nonvolatile memory, has a broad prospect in the fields of infor-mation storage, exchange, and neural computing. Nowadays, it is still a challenge to achieve ferroelectric memristor with high resistive switching effect. In this work, epitaxial Ca-doped Pb(Zr0.40Ti0.60)O3 films embedded various concentrations Au nanoparticles (NPs) (Abbreviated as Au-PCZT) were deposited on the Nb: SrTiO3 (NSTO) substrate to form Au-PCZT/NSTO heterostructures. On the one hand, adding appropriate Au NPs into the PCZT films can improve the leakage current. When Au NPs capture electrons, the current in the high resistance state will be decreased due to the coulomb blocking effect. On the other hand, the ferroelectric po-larization still maintains at a good level. Eventually, the resistive switching (RS) on/off ratio can reach 106 by embedding 3 mol% Au NPs. Compared with the pure PCZT thin films, the resistance-variable switching ratio is improved by two orders of magnitude. In addition, multi-level data storage can be realized under different bias voltages. Our results provide a feasible way to achieve high-on/off-ratio ferroelectric memristors with multi-level data storage capabilities.
关键词	PCZT thin films Au nanoparticles Ferroelectric polarization Multi-level data storage Resistive switching
资助者	Central Government Guiding Local Science and Technology Development Funds of Liaoning Province ; National Basic Research Program
DOI	10.1016/j.jallcom.2023.171832
收录类别	SCI
语种	英语
资助项目	Central Government Guiding Local Science and Technology Development Funds of Liaoning Province[2021JH6/10500168] ; National Basic Research Program[2017YFA0206302]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:001070514600001
出版者	ELSEVIER SCIENCE SA
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/179226
专题	中国科学院金属研究所
通讯作者	Wang, Zhan Jie
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Peoples R China
推荐引用方式 GB/T 7714	Yue, Zhi Yun,Zhang, Zhi Dong,Wang, Zhan Jie. Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2023,968:7.
APA	Yue, Zhi Yun,Zhang, Zhi Dong,&Wang, Zhan Jie.(2023).Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films.JOURNAL OF ALLOYS AND COMPOUNDS,968,7.
MLA	Yue, Zhi Yun,et al."Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films".JOURNAL OF ALLOYS AND COMPOUNDS 968(2023):7.