Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization

doi:10.1016/j.jmst.2023.07.007

IMR OpenIR

	Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization
	Yue, Zhi Yun 1,2; Zhang, Zhi Dong 1,2; Wang, Zhan Jie 3
通讯作者	Wang, Zhan Jie(wangzj@imr.ac.cn)
	2024-02-01
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	171 页码:139-146
摘要	As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr 0.40 Ti 0.60 )O 3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO 3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 x 10 5 , about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices. & COPY; 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
关键词	Ferroelectric memristor Ca -doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching
资助者	Central Government Guiding Local Science and Technology Development Funds of Liaoning Province in 2021 ; National Basic Research Program of China
DOI	10.1016/j.jmst.2023.07.007
收录类别	SCI
语种	英语
资助项目	Central Government Guiding Local Science and Technology Development Funds of Liaoning Province in 2021[2021JH6/10500168] ; National Basic Research Program of China[2017YFA0206302]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:001064945100001
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/179232
专题	中国科学院金属研究所
通讯作者	Wang, Zhan Jie
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Peoples R China
推荐引用方式 GB/T 7714	Yue, Zhi Yun,Zhang, Zhi Dong,Wang, Zhan Jie. Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2024,171:139-146.
APA	Yue, Zhi Yun,Zhang, Zhi Dong,&Wang, Zhan Jie.(2024).Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,171,139-146.
MLA	Yue, Zhi Yun,et al."Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 171(2024):139-146.