Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi<sub>2</sub>Se<sub>3</sub> films

doi:10.1016/j.jssc.2023.124315

IMR OpenIR

	Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi₂Se₃ films
	Li, Mingze 1,2; Wang, Zhenhua 1,2; Shi, Xudong 1,2; Li, Tingting 1,2; Gao, Xuan P. A.3; Zhang, Zhidong 1,2
通讯作者	Li, Mingze(mzli14s@imr.ac.cn) ; Wang, Zhenhua(zhwang@imr.ac.cn)
	2023-12-01
发表期刊	JOURNAL OF SOLID STATE CHEMISTRY
ISSN	0022-4596
卷号	328 页码:8
摘要	We report the electrical and magnetic transport behavior in vertical Cu-doped Bi2Se3 nanoplate films prepared by the chemical vapor deposition method. In vertical Cu-doped Bi2Se3 nanoplate films, the topological surface states are tuned by both the large surface-to-bulk ratio and the Cu doping. Due to their high specific surface area, the magnetoresistance of the vertical undoped Bi2Se3 nanoplate film exhibits a weak antilocalization effect, and it indicates that the topological surface state properties are greatly enhanced. In vertical Cu-doped Bi2Se3 nanoplate films, the electron doping is inhibited, and the carrier type is changed from n-type to p-type. The observed linear magnetoresistance is attributed to have a quantum origin from the topological surface states. When the Cu concentration reaches 1.73 at.% in vertical Bi2Se3 nanoplate film, the linear magnetoresistance can be maintained up to 100 K. Meanwhile, these vertical nanoplate films exhibit the 3D magnetotransport property. Thus, using the same material system with a broad range of carrier density and type, our work shows the transition from a weak-antilocalization to linear magnetoresistance in nanostructured topological insulator Bi2Se3 films with an unusual morphology where the nanoplates are vertically aligned to increase the surface area.
关键词	P -type topological insulators Structure geometry control High surface -to -bulk ratio Chemical potential tuning Linear magnetoresistance Topological surface states
资助者	National Natural Science Foundation of China (NSFC)
DOI	10.1016/j.jssc.2023.124315
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China (NSFC)[51971220] ; National Natural Science Foundation of China (NSFC)[52201233] ; National Natural Science Foundation of China (NSFC)[52031014]
WOS研究方向	Chemistry
WOS类目	Chemistry, Inorganic & Nuclear ; Chemistry, Physical
WOS记录号	WOS:001079216700001
出版者	ACADEMIC PRESS INC ELSEVIER SCIENCE
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/179404
专题	中国科学院金属研究所
通讯作者	Li, Mingze; Wang, Zhenhua
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
推荐引用方式 GB/T 7714	Li, Mingze,Wang, Zhenhua,Shi, Xudong,et al. Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi₂Se₃ films[J]. JOURNAL OF SOLID STATE CHEMISTRY,2023,328:8.
APA	Li, Mingze,Wang, Zhenhua,Shi, Xudong,Li, Tingting,Gao, Xuan P. A.,&Zhang, Zhidong.(2023).Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi₂Se₃ films.JOURNAL OF SOLID STATE CHEMISTRY,328,8.
MLA	Li, Mingze,et al."Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi₂Se₃ films".JOURNAL OF SOLID STATE CHEMISTRY 328(2023):8.