Facile Growth of <i>h</i>-BN Films by Using Surface-Activated <i>h</i>-BN Powders as Precursors

doi:10.1002/smtd.202401422

IMR OpenIR

	Facile Growth of h-BN Films by Using Surface-Activated h-BN Powders as Precursors
	Chen, Chen 1,2; Wang, Qiang 1,2; Zhang, Zongyuan 3; Liu, Zhibo 1,2; Xu, Chuan 1,2; Ren, Wencai 1,2
通讯作者	Xu, Chuan(xuc@imr.ac.cn)
	2025-02-14
发表期刊	SMALL METHODS
ISSN	2366-9608
页码	9
摘要	Atomically thick hexagonal boron nitride (h-BN) films have gained increasing interest, such as nanoelectronics and protection coatings. Chemical vapor deposition (CVD) has been proven to be an efficient method for synthesizing h-BN thin films, but its precursors are still limited. Here, it is reported that a novel and easily available precursor, surface-activated h-BN (As-hBN), with NH3/N2 as an additional nitrogen source is used for CVD growth of monolayer h-BN films on the Cu foils. The as-grown h-BN films can significantly enhance the anti-oxidation ability of copper. Molecular dynamics simulations reveal that the reactivity of the As-hBN precursors is attributed to the decomposition of unstable BO3 and O-terminal edges on the surface under H2 atmosphere. This method provides a more reliable approach for fabricating h-BN films.
关键词	2D h-BN activated h-BN chemical vapor deposition growth mechanism precursor
资助者	National Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; LiaoNing Revitalization Talents Program ; Institute of Metal Research, Chinese Academy of Sciences ; Special Projects of the Central Government in Guidance of Local Science and Technology Development ; Youth Innovation Promotion Association CAS
DOI	10.1002/smtd.202401422
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; LiaoNing Revitalization Talents Program[XLYC2201003] ; Institute of Metal Research, Chinese Academy of Sciences[2019000178] ; Special Projects of the Central Government in Guidance of Local Science and Technology Development[2024010859-JH6/1006] ; Youth Innovation Promotion Association CAS[2021000185] ; [52122202] ; [521188101]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:001420552400001
出版者	WILEY-V C H VERLAG GMBH
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/180009
专题	中国科学院金属研究所
通讯作者	Xu, Chuan
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Anhui Univ, Inst Phys Sci & Informat Technol, Ctr High Magnet Fields & Free Electron Lasers, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Chen, Chen,Wang, Qiang,Zhang, Zongyuan,et al. Facile Growth of h-BN Films by Using Surface-Activated h-BN Powders as Precursors[J]. SMALL METHODS,2025:9.
APA	Chen, Chen,Wang, Qiang,Zhang, Zongyuan,Liu, Zhibo,Xu, Chuan,&Ren, Wencai.(2025).Facile Growth of h-BN Films by Using Surface-Activated h-BN Powders as Precursors.SMALL METHODS,9.
MLA	Chen, Chen,et al."Facile Growth of h-BN Films by Using Surface-Activated h-BN Powders as Precursors".SMALL METHODS (2025):9.