Interface Element Accumulation-Induced Single Ferroelectric Domain for High-Performance Neuromorphic Synapse

doi:10.1002/adfm.202423225

IMR OpenIR

	Interface Element Accumulation-Induced Single Ferroelectric Domain for High-Performance Neuromorphic Synapse
	Li, Xiaoqi 1,2; Liu, Jiaqi 1,2; Xu, Fan 3; Ali, Sajjad 4; Wu, Han 1,2; Huang, Biaohong 1; Deng, Haoyue 5,6; Li, Yizhuo 1; Jiang, Yuxuan 1,2; Fan, Zhen 5,6; Tang, Yunlong 1,2; Wang, Yujia 1,2; Bououdina, Mohamed 4; Yang, Teng 1,2; Hu, Weijin 1,2; Zhang, Zhidong 1
通讯作者	Hu, Weijin(wjhu@imr.ac.cn)
	2025-02-19
发表期刊	ADVANCED FUNCTIONAL MATERIALS
ISSN	1616-301X
页码	12
摘要	Ferroelectric (FE) synapses are promising for neuromorphic computing toward enhanced artificial intelligence systems. Nonetheless, there is a significant gap in understanding how to effectively tailor self-polarization and its implications on synaptic device performance. Here, an approach using interfacial element accumulation is reported to tailor the self-polarization states of BaTiO3 (BTO)/La0.67Sr0.33MnO3 (LSMO) FE heterostructure into a single domain state. This single domain configuration results are demonstrated in a gradient distribution of oxygen vacancies across the film thickness, yielding an extraordinary on/off ratio of 10(7) in Pt/BTO/LSMO FE diodes. This giant resistive switching enables the long-term potentiation and long-term depression synaptic functions of excellent linearity and symmetry (with a nonsymmetry factor as low as 0.1), leading to a supervised learning ability of the associated artificial neural network with a high pattern recognition accuracy of 95%. This work provides a simple design principle for FE single domain, which is substantial in enhancing the performance of FE synapses for neuromorphic computing.
关键词	BaTiO3 ferroelectric synapse neuromorphic computing oxygen vacancy single domain Sr diffusion
资助者	National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; International Partnership Program of Chinese Academy of Sciences ; Special Fund for Central Government Guiding the Local Development of Science and Technology ; Youth Innovation Promotion Association CAS (Youth Innovation Promotion Association of the Chinese Academy of Sciences) ; Prince Sultan University
DOI	10.1002/adfm.202423225
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2022YFA1203903] ; National Natural Science Foundation of China (NSFC)[92477120] ; National Natural Science Foundation of China (NSFC)[61974147] ; National Natural Science Foundation of China (NSFC)[52031014] ; National Natural Science Foundation of China (NSFC)[52122101] ; International Partnership Program of Chinese Academy of Sciences[172GJHZ2024044MI] ; Special Fund for Central Government Guiding the Local Development of Science and Technology[2023JH6/100100063] ; Youth Innovation Promotion Association CAS (Youth Innovation Promotion Association of the Chinese Academy of Sciences)[2021187] ; Youth Innovation Promotion Association CAS (Youth Innovation Promotion Association of the Chinese Academy of Sciences)[Y202048] ; Prince Sultan University
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001426358900001
出版者	WILEY-V C H VERLAG GMBH
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/180111
专题	中国科学院金属研究所
通讯作者	Hu, Weijin
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, IMR,CAS, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.China Special Equipment Inspect & Res Inst, Beijing 100029, Peoples R China 4.Prince Sultan Univ, Coll Humanities & Sci, Energy Water & Environm Lab, Riyadh 11586, Saudi Arabia 5.South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R China 6.South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Peoples R China
推荐引用方式 GB/T 7714	Li, Xiaoqi,Liu, Jiaqi,Xu, Fan,et al. Interface Element Accumulation-Induced Single Ferroelectric Domain for High-Performance Neuromorphic Synapse[J]. ADVANCED FUNCTIONAL MATERIALS,2025:12.
APA	Li, Xiaoqi.,Liu, Jiaqi.,Xu, Fan.,Ali, Sajjad.,Wu, Han.,...&Zhang, Zhidong.(2025).Interface Element Accumulation-Induced Single Ferroelectric Domain for High-Performance Neuromorphic Synapse.ADVANCED FUNCTIONAL MATERIALS,12.
MLA	Li, Xiaoqi,et al."Interface Element Accumulation-Induced Single Ferroelectric Domain for High-Performance Neuromorphic Synapse".ADVANCED FUNCTIONAL MATERIALS (2025):12.