Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering (vol 59, pg 21828, 2024)

doi:10.1007/s10853-024-10575-x

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	Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering (vol 59, pg 21828, 2024)
	Li, Ziyuan 1; Shen, Longhai 1; Zhou, Ouxiang 1; Zhu, Xiaotian 2; Zhang, Yu 1; Wang, Quhui 1; Qi, Dongli 1; Zhang, Xinglai 1; Han, Mengyao 1; Xu, Junhao 1; Chen, Ye 1; Li, Yuhao 1
通讯作者	Shen, Longhai(shenlonghai@163.com)
	2025
发表期刊	JOURNAL OF MATERIALS SCIENCE
ISSN	0022-2461
卷号	60 期号:4 页码:2165-2167
DOI	10.1007/s10853-024-10575-x
收录类别	SCI
语种	英语
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:001391137800001
出版者	SPRINGER
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/180767
专题	中国科学院金属研究所
通讯作者	Shen, Longhai
作者单位	1.Shenyang Ligong Univ, Sch Sci, Shenyang 110159, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Li, Ziyuan,Shen, Longhai,Zhou, Ouxiang,et al. Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering (vol 59, pg 21828, 2024)[J]. JOURNAL OF MATERIALS SCIENCE,2025,60(4):2165-2167.
APA	Li, Ziyuan.,Shen, Longhai.,Zhou, Ouxiang.,Zhu, Xiaotian.,Zhang, Yu.,...&Li, Yuhao.(2025).Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering (vol 59, pg 21828, 2024).JOURNAL OF MATERIALS SCIENCE,60(4),2165-2167.
MLA	Li, Ziyuan,et al."Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering (vol 59, pg 21828, 2024)".JOURNAL OF MATERIALS SCIENCE 60.4(2025):2165-2167.