Enhanced surface transport properties of high-quality ultrathin epitaxial Bi<sub>2</sub>Te<sub>3</sub> films

doi:10.1007/s10853-025-10613-2

IMR OpenIR

	Enhanced surface transport properties of high-quality ultrathin epitaxial Bi₂Te₃ films
	Gao, Jian 1,2; Shi, Xudong 1,2; Li, Tingting 1,2; Wang, Zhiyu 1,2; Li, Mingze 1,2; Gao, Xuan P. A.3; Wang, Zhenhua 1,2; Zhang, Zhidong 1
通讯作者	Li, Mingze(mzli14s@imr.ac.cn) ; Wang, Zhenhua(zhwang@imr.ac.cn)
	2025-01-15
发表期刊	JOURNAL OF MATERIALS SCIENCE
ISSN	0022-2461
页码	11
摘要	The topological surface states (TSS) of 3D topological insulators (TI) play a crucial role in their transport. How to avoid intrinsic defects in materials and thus increase the proportion of surface states in the transport process poses a great challenge to materials scientists. In our work, high-quality epitaxial topological insulator Bi2Te3 ultrathin films with flat surface were prepared by pulsed laser deposition (PLD). The insulating resistivity-temperature (rho-T) curve in Bi2(TexSe1-x)3 films with optimal doping concentration (25-35%) shows the transport of bulk state caused by intrinsic defects which is gradually suppressed. In thinner Bi2Te3 films, the rho-T curve displays a transition from negative to positive slope at higher temperatures, which is attributed to enhanced electron-electron interaction (EEI). The transition from a parabolic to a linear to a weak anti-localization (WAL) was observed in the magnetoresistance (MR) results of pure Bi2Te3 ultrathin films with different thicknesses. By comparing the MR of Bi2(TexSe1-x)3 films with different Se doping concentrations, it is found that the MR of the Se-doped films and the WAL near the zero magnetic field are obvious, and the change is greatest at the optimal doping concentration. The magnetoconductivity (MC) data Delta G can be fitted well by the quantum interference model Hikami, Larkin, and Nagaoka (HLN) equation at magnetic fields as high as +/- 7 T. This provides guidance for further research on how to enhance the TSS transport of 3D TIs.
资助者	National Natural Science Foundation of China ; National Natural Science Foundation of China
DOI	10.1007/s10853-025-10613-2
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[52371204] ; National Natural Science Foundation of China[52201233] ; National Natural Science Foundation of China[52031014] ; National Natural Science Foundation of China
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:001396196100001
出版者	SPRINGER
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/180842
专题	中国科学院金属研究所
通讯作者	Li, Mingze; Wang, Zhenhua
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland Hts, OH 44106 USA
推荐引用方式 GB/T 7714	Gao, Jian,Shi, Xudong,Li, Tingting,et al. Enhanced surface transport properties of high-quality ultrathin epitaxial Bi₂Te₃ films[J]. JOURNAL OF MATERIALS SCIENCE,2025:11.
APA	Gao, Jian.,Shi, Xudong.,Li, Tingting.,Wang, Zhiyu.,Li, Mingze.,...&Zhang, Zhidong.(2025).Enhanced surface transport properties of high-quality ultrathin epitaxial Bi₂Te₃ films.JOURNAL OF MATERIALS SCIENCE,11.
MLA	Gao, Jian,et al."Enhanced surface transport properties of high-quality ultrathin epitaxial Bi₂Te₃ films".JOURNAL OF MATERIALS SCIENCE (2025):11.