Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP<sub>2</sub>S<sub>6</sub> by ion-electron co-modulations

doi:10.1126/sciadv.adr3105

IMR OpenIR

	Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP₂S₆ by ion-electron co-modulations
	Sun, Yujie 1,2; Zhang, Rongjie 1,2; Tan, Junyang 1,2; Zeng, Shengfeng 1,2; Li, Shengnan 1,2; Wei, Qiang 1,2; Zhang, Zhi-Yuan 1,2; Zhao, Shilong 3; Zou, Xiaolong 1,2; Liu, Bilu 1,2; Cheng, Hui-Ming 4,5
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn)
	2025-01-08
发表期刊	SCIENCE ADVANCES
ISSN	2375-2548
卷号	11 期号:2 页码:7
摘要	In-plane anisotropic two-dimensional (2D) semiconductors have gained much interest due to their anisotropic properties, which opens avenues in designing functional electronics. Currently reported in-plane anisotropic semiconductors mainly rely on crystal lattice anisotropy. Herein, AgCrP2S6 (ACPS) is introduced as a promising member to the anisotropic 2D semiconductors, in which, both crystal structure and ion-electron co-modulations are used to achieve tunable in-plane conductance anisotropy. Scanning tunneling electron microscopy and polarized Raman spectroscopy show the structural anisotropy of ACPS. Electrical transport measurements show that its tunable in-plane conductance anisotropy is related to the ion-electron co-modulations, where Ag ion migration is anisotropic along a axis and b axis. Electrical transport measurements show the semiconducting properties of ACPS, as also supported by photoluminescence results. Moreover, the transfer curves of ACPS showcase large Vg-related hysteresis, which is directionally controlled by anisotropic Ag ion migration. This work offers a possibility of using anisotropic charge transport in functional electronics by ion-electron co-modulations.
资助者	National Science Foundation of china
DOI	10.1126/sciadv.adr3105
收录类别	SCI
语种	英语
资助项目	National Science Foundation of china
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:001392723500028
出版者	AMER ASSOC ADVANCEMENT SCIENCE
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/180870
专题	中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen Key Lab Adv Layered Mat Value Added Appli, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Inst Mat Res, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 3.Foshan Univ, Sch Elect & Informat Engn, Foshan 528000, Peoples R China 4.Chinese Acad Sci, Shenzhen Inst Adv Technol, Inst Technol Carbon Neutral, Shenzhen 518055, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Sun, Yujie,Zhang, Rongjie,Tan, Junyang,et al. Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP₂S₆ by ion-electron co-modulations[J]. SCIENCE ADVANCES,2025,11(2):7.
APA	Sun, Yujie.,Zhang, Rongjie.,Tan, Junyang.,Zeng, Shengfeng.,Li, Shengnan.,...&Cheng, Hui-Ming.(2025).Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP₂S₆ by ion-electron co-modulations.SCIENCE ADVANCES,11(2),7.
MLA	Sun, Yujie,et al."Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP₂S₆ by ion-electron co-modulations".SCIENCE ADVANCES 11.2(2025):7.