Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films

doi:10.1016/j.micron.2024.103762

IMR OpenIR

	Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films
	He, Mengdi 1,2; Yao, Tingting 1,2; Yan, Xuexi 1,2; Qiao, Beibei 1,2; Qian, Zhen 1,2; Jiang, Yixiao 1,2; Tian, Min 3; Yang, Zhiqing 3; Chen, Chunlin 1,2
通讯作者	Yao, Tingting(ttyao11s@imr.ac.cn) ; Chen, Chunlin(clchen@imr.ac.cn)
	2025-03-01
发表期刊	MICRON
ISSN	0968-4328
卷号	190 页码:8
摘要	HfO2 has been widely used in the electronics industry as a dielectric material with excellent properties. It has attracted much attention since HfO2 was first reported to be ferroelectric in 2011. With the continuous advancement of research, various methods such as oxygen vacancy control and interface control have been proven to be able to stabilize the metastable polar o-phase structure in doped hafnium oxide thin films. However, there are still some shortcomings in the relevant issues concerning non-doped hafnium oxide thin film materials. Here, polycrystalline non-doped HfO2 thin films were grown on SrTiO3 substrates by pulsed laser deposition (PLD). Atomic force microscopy investigation suggests that the surface roughness of HfO2 thin films increases as the film thickness increases. X-ray photoelectron spectroscopy analyses indicate that the HfO2 thin film has a high purity and contain only Hf4+ ions. The band gap of HfO2 was measured by valence EELS and UV-visible spectra. Atomic structures of the HfO2/SrTiO3 heterointerface have been studied by the aberration-corrected transmission electron microscopy and energy-dispersive X-ray spectroscopy. The HfO2/SrTiO3 heterointerface is atomically abrupt and incoherent. Our findings suggest that non-doped HfO2 films with o-phase structure through PLD technology.
关键词	Hafnium oxide Thin film Pulsed laser deposition Orthorhombic phase Transmission electron microscopy
资助者	National Natural Science Foundation of China ; Ji Hua Lab-oratory Project ; Guangdong Major Project of Basic Research
DOI	10.1016/j.micron.2024.103762
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[52125101] ; National Natural Science Foundation of China[52271015] ; Ji Hua Lab-oratory Project[X210141TL210] ; Guangdong Major Project of Basic Research[2021B0301030003]
WOS研究方向	Microscopy
WOS类目	Microscopy
WOS记录号	WOS:001375747800001
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/181488
专题	中国科学院金属研究所
通讯作者	Yao, Tingting; Chen, Chunlin
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Jihua Lab, Foshan 528251, Peoples R China
推荐引用方式 GB/T 7714	He, Mengdi,Yao, Tingting,Yan, Xuexi,et al. Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films[J]. MICRON,2025,190:8.
APA	He, Mengdi.,Yao, Tingting.,Yan, Xuexi.,Qiao, Beibei.,Qian, Zhen.,...&Chen, Chunlin.(2025).Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films.MICRON,190,8.
MLA	He, Mengdi,et al."Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films".MICRON 190(2025):8.