Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering

doi:10.1007/s10853-024-10434-9

IMR OpenIR

	Photoelectric characteristic of single-phase In_xGa_1-xN films with tunable bandgap through RF magnetron sputtering
	Li, Ziyuan 1; Shen, Longhai 1; Zhou, Ouxiang 1; Zhu, Xiaotian 1; Zhang, Yu 1; Wang, Quhui 1; Qi, Dongli 1; Zhang, Xinglai 2; Han, Mengyao 1; Xu, Junhao 1; Chen, Ye 1; Li, Yuhao 1
通讯作者	Shen, Longhai(shenlonghai@163.com)
	2024-12-01
发表期刊	JOURNAL OF MATERIALS SCIENCE
ISSN	0022-2461
卷号	59 期号:47 页码:21828-21845
摘要	InxGa1-xN films with tunable bandgap hold significant potential for photoelectric applications, particularly in wavelength-selective and UV-visible photodetection. Herein, a unique target was designed to prepare bandgap-tunable InxGa1-xN films by RF (radio frequency) magnetron sputtering. By adjusting the RF power to change the In content (x value), we prepared InxGa1-xN films with bandgap variations in the range of 2.15-2.63 eV. Upon further investigation, it was found that the grown InxGa1-xN films had hexagonal structure and did not undergo phase separation in the In-rich composition. With the increase of In content from 0.46 to 0.60, the preferred orientation of the InxGa1-xN films changed from (101) to (100) plane, while the surface morphology of the InxGa1-xN films changed from worm-like to spherical grains. Photoluminescence peaks of InxGa1-xN films was composed of intrinsic and defect luminescence. Under irradiation of 450 and 650 nm laser, the responsivity of the InxGa1-xN metal-semiconductor-metal photodetector can reach 5.15 x 10-7 and 3.2 x 10-7 A/W, and the fastest response time can reach 1.28 and 1.32 s, respectively.
资助者	Opening Project of State Key Laboratory of Superhard Materials ; Natural Science Foundation of Liaoning Province ; National Natural Science Foundation of China
DOI	10.1007/s10853-024-10434-9
收录类别	SCI
语种	英语
资助项目	Opening Project of State Key Laboratory of Superhard Materials ; Natural Science Foundation of Liaoning Province[2019-BS-202] ; National Natural Science Foundation of China[12274304] ; [202004]
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:001367967100001
出版者	SPRINGER
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/181525
专题	中国科学院金属研究所
通讯作者	Shen, Longhai
作者单位	1.Shenyang Ligong Univ, Sch Sci, Shenyang 110159, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Li, Ziyuan,Shen, Longhai,Zhou, Ouxiang,et al. Photoelectric characteristic of single-phase In_xGa_1-xN films with tunable bandgap through RF magnetron sputtering[J]. JOURNAL OF MATERIALS SCIENCE,2024,59(47):21828-21845.
APA	Li, Ziyuan.,Shen, Longhai.,Zhou, Ouxiang.,Zhu, Xiaotian.,Zhang, Yu.,...&Li, Yuhao.(2024).Photoelectric characteristic of single-phase In_xGa_1-xN films with tunable bandgap through RF magnetron sputtering.JOURNAL OF MATERIALS SCIENCE,59(47),21828-21845.
MLA	Li, Ziyuan,et al."Photoelectric characteristic of single-phase In_xGa_1-xN films with tunable bandgap through RF magnetron sputtering".JOURNAL OF MATERIALS SCIENCE 59.47(2024):21828-21845.