IMR OpenIR
Improved energy storage density in La-doped PbZr0.95Ti0.05O3 films with stress regulation
Yang, Fei1,2; Shao, Denghui1,2; Liang, Taokai1,2; Hou, Mengzhe1,2; Zhang, Bihui1,2,3; Li, Yizhuo4; Hu, Weijin4; Li, Xiaofang1,2; Hu, Yanchun1,2; Zhang, Dawei1,2; Wang, Xianwei1,2
通讯作者Zhang, Bihui(zhangbh@zju.edu.cn) ; Wang, Xianwei(xwwang2000@163.com)
2024-03-05
发表期刊JOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
卷号976页码:10
摘要The Pb1-1.5xLaxZr0.95Ti0.05O3 films with different La3+ contents were successfully prepared on the LaNiO3/SiO2/ Si substrates by sol -gel method. The effect of La3+ doping on the microstructure, electrical properties, and energy storage performance of the films are systematically investigated. It is found that the introducing of La3+ with a smaller tolerance factor could enhance the lattice distortion and compressive stresses, leading to smaller grain size, slimmer electric hysteresis loops, and lower phase transition field hysteresis. As a result, a relatively high energy storage density of 30.2 J/cm3 together with the energy storage efficiency of 62.2% has been achieved in Pb0.82La0.12Zr0.95Ti0.05 antiferroelectric thin films with the optimum doping content. This improvement is largely attributed to the enhanced breakdown field strength from 1442 kV/cm to 1564 kV/cm as a result of grain size reduction. Our results demonstrate the crucial role of decreased tolerance factor in stabilizing the antiferroelectric phase and enhancing the phase transition electric field, and provide an effective route to enhance the energy storage performance of antiferroelectric thin films.
关键词Antiferroelectrics Breakdown strength Energy storage density Dielectric Leakage
资助者National Natural Science Foundation of China ; Scientific Research Project in Henan Normal University ; National University Student Innovation Program ; University Student Innovation Program in Henan Normal University
DOI10.1016/j.jallcom.2023.173352
收录类别SCI
语种英语
资助项目National Natural Science Foundation of China[61974147] ; Scientific Research Project in Henan Normal University[20210376] ; National University Student Innovation Program[202010476023] ; University Student Innovation Program in Henan Normal University[20200208] ; University Student Innovation Program in Henan Normal University[20200209] ; University Student Innovation Program in Henan Normal University[20200212]
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号WOS:001151688100001
出版者ELSEVIER SCIENCE SA
引用统计
被引频次:9[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/183883
专题中国科学院金属研究所
通讯作者Zhang, Bihui; Wang, Xianwei
作者单位1.Henan Normal Univ, Sch Phys, Lab Funct Mat, Xinxiang 453007, Peoples R China
2.Henan Key Lab Photovolta Mat, Xinxiang 453007, Peoples R China
3.Chongqing Univ Technol, Coll Sci, Chongqing 400054, Peoples R China
4.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714
Yang, Fei,Shao, Denghui,Liang, Taokai,et al. Improved energy storage density in La-doped PbZr0.95Ti0.05O3 films with stress regulation[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2024,976:10.
APA Yang, Fei.,Shao, Denghui.,Liang, Taokai.,Hou, Mengzhe.,Zhang, Bihui.,...&Wang, Xianwei.(2024).Improved energy storage density in La-doped PbZr0.95Ti0.05O3 films with stress regulation.JOURNAL OF ALLOYS AND COMPOUNDS,976,10.
MLA Yang, Fei,et al."Improved energy storage density in La-doped PbZr0.95Ti0.05O3 films with stress regulation".JOURNAL OF ALLOYS AND COMPOUNDS 976(2024):10.
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Yang, Fei]的文章
[Shao, Denghui]的文章
[Liang, Taokai]的文章
百度学术
百度学术中相似的文章
[Yang, Fei]的文章
[Shao, Denghui]的文章
[Liang, Taokai]的文章
必应学术
必应学术中相似的文章
[Yang, Fei]的文章
[Shao, Denghui]的文章
[Liang, Taokai]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。