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Enhancing Interfacial Capacitance by Boron Doping in Vertically Porous Carbon Toward High-Performance AC Filtering Electrochemical Capacitors
Chen, Bin1,2; Huang, Nan1,2; Zhai, Zhaofeng1; Zhang, Chuyan1; Liu, Lusheng1; Yang, Bing1,2; Jiang, Xin1,3
通讯作者Huang, Nan(nhuang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn)
2024-01-31
发表期刊SMALL
ISSN1613-6810
页码10
摘要Electrochemical capacitors (ECs) show great perspective in alternate current (AC) filtering once they simultaneously reach ultra-fast response and high capacitance density. Nevertheless, the structure-design criteria of the two key properties are often mutually incompatible in electrode construction. Herein, it is proposed that combining vertically oriented porous carbon with enhanced interfacial capacitance (Ci) can efficiently solve this issue. Theoretically, the density function theory calculation shows that the Ci of a carbon electrode can be enhanced by boron doping due to the corresponding compact induced charge layer. Experimentally, the vertical-oriented boron-doped graphene nanowalls (BGNWs) electrodes, whose Ci is enhanced from 4.20 to 10.16 mu F cm-2 upon boron doping, are prepared on a large scale (480 cm2) using a hot-filament chemical vapor deposition technique (HFCVD). Owing to the high Ci and vertically oriented porous structure, BGNWs-based EC has a high capacitance density of 996 mu F cm-2 with a phase angle of - 79.4 degrees at 120 Hz in aqueous electrolyte and a high energy density of 1953 mu FV2 cm-2 in organic electrolyte. As a result, the EC is capable of smoothing 120 Hz ripples for 60 Hz AC filtering. These results provide enlightening insights on designing high-performance ECs for high-frequency applications. A novel electrode design strategy of combining vertically oriented porous carbon with boron-doping-cased high interfacial capacitance (Ci) is proposed to improve the performance of electrochemical capacitors (ECs) at high frequencies. The corresponding EC exhibits a capacitance density of 996 mu F cm-2 with a phase angle of -79.4 degrees at 120 Hz and excellent AC filtering capability. image
关键词AC filtering boron-doped carbon electrochemical capacitor interfacial capacitance vertical structure
资助者National Natural Science Foundation of China ; Technical Innovation Project for Functional Development of Instruments and Equipment of the Chinese Academy of Sciences
DOI10.1002/smll.202310523
收录类别SCI
语种英语
资助项目National Natural Science Foundation of China ; Technical Innovation Project for Functional Development of Instruments and Equipment of the Chinese Academy of Sciences ; [51202257]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:001152401700001
出版者WILEY-V C H VERLAG GMBH
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/184000
专题中国科学院金属研究所
通讯作者Huang, Nan; Jiang, Xin
作者单位1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany
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GB/T 7714
Chen, Bin,Huang, Nan,Zhai, Zhaofeng,et al. Enhancing Interfacial Capacitance by Boron Doping in Vertically Porous Carbon Toward High-Performance AC Filtering Electrochemical Capacitors[J]. SMALL,2024:10.
APA Chen, Bin.,Huang, Nan.,Zhai, Zhaofeng.,Zhang, Chuyan.,Liu, Lusheng.,...&Jiang, Xin.(2024).Enhancing Interfacial Capacitance by Boron Doping in Vertically Porous Carbon Toward High-Performance AC Filtering Electrochemical Capacitors.SMALL,10.
MLA Chen, Bin,et al."Enhancing Interfacial Capacitance by Boron Doping in Vertically Porous Carbon Toward High-Performance AC Filtering Electrochemical Capacitors".SMALL (2024):10.
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