Enhanced polarization switching characteristics of HfO<sub>2</sub> ultrathin films via acceptor-donor co-doping

doi:10.1038/s41467-024-47194-8

IMR OpenIR

	Enhanced polarization switching characteristics of HfO₂ ultrathin films via acceptor-donor co-doping
	Zhou, Chao 1; Ma, Liyang 2; Feng, Yanpeng 3; Kuo, Chang-Yang 4,5; Ku, Yu-Chieh 4; Liu, Cheng-En 4; Cheng, Xianlong 1; Li, Jingxuan 1; Si, Yangyang 1; Huang, Haoliang 6; Huang, Yan 1; Zhao, Hongjian 7; Chang, Chun-Fu 8; Das, Sujit 9; Liu, Shi 2; Chen, Zuhuang 1,10
通讯作者	Liu, Shi(liushi@westlake.edu.cn) ; Chen, Zuhuang(zuhuang@hit.edu.cn)
	2024-04-03
发表期刊	NATURE COMMUNICATIONS
卷号	15 期号:1 页码:10
摘要	In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.
资助者	National Key R&D Program of China ; National Natural Science Foundation of China ; Guangdong Basic and Applied Basic Research Foundation ; Shenzhen Science and Technology Innovation project ; Shenzhen Science and Technology Program ; Fundamental Research Funds for the Central Universities ; Talent Recruitment Project of Guangdong ; Ministry of Science and Technology in Taiwan ; Max Planck-POSTECH-Hsinchu Center for Complex Phase Materials ; Science and Engineering Research Board ; Indian Institute of Science start up grant
DOI	10.1038/s41467-024-47194-8
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2021YFA1202100] ; National Natural Science Foundation of China[52372105] ; National Natural Science Foundation of China[12361141821] ; National Natural Science Foundation of China[12074319] ; Guangdong Basic and Applied Basic Research Foundation[2020B1515020029] ; Guangdong Basic and Applied Basic Research Foundation[2021A1515110064] ; Guangdong Basic and Applied Basic Research Foundation[2023A1515011058] ; Shenzhen Science and Technology Innovation project[JCYJ20200109112829287] ; Shenzhen Science and Technology Program[KQTD20200820113045083] ; Fundamental Research Funds for the Central Universities[HIT.OCEF.2022038] ; Talent Recruitment Project of Guangdong[2019QN01C202] ; Ministry of Science and Technology in Taiwan[MOST 110-2112-M-A49-002-MY3] ; Max Planck-POSTECH-Hsinchu Center for Complex Phase Materials ; Science and Engineering Research Board[SRG/2022/000058] ; Indian Institute of Science start up grant
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:001197842900016
出版者	NATURE PORTFOLIO
引用统计	被引频次：24[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/185501
专题	中国科学院金属研究所
通讯作者	Liu, Shi; Chen, Zuhuang
作者单位	1.Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Peoples R China 2.Westlake Univ, Sch Sci, Dept Phys, Key Lab Quantum Mat Zhejiang Prov, Hangzhou 310024, Zhejiang, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China 4.Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan 5.Natl Synchrotron Radiat Res Ctr, Hsinchu, Taiwan 6.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 7.Jilin Univ, Coll Phys, Key Lab Mat Simulat Methods & Software, Minist Educ, Changchun 130012, Peoples R China 8.Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany 9.Indian Inst Sci, Mat Res Ctr, Bangalore 560012, India 10.Harbin Inst Technol, Flexible Printed Elect Technol Ctr, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Chao,Ma, Liyang,Feng, Yanpeng,et al. Enhanced polarization switching characteristics of HfO₂ ultrathin films via acceptor-donor co-doping[J]. NATURE COMMUNICATIONS,2024,15(1):10.
APA	Zhou, Chao.,Ma, Liyang.,Feng, Yanpeng.,Kuo, Chang-Yang.,Ku, Yu-Chieh.,...&Chen, Zuhuang.(2024).Enhanced polarization switching characteristics of HfO₂ ultrathin films via acceptor-donor co-doping.NATURE COMMUNICATIONS,15(1),10.
MLA	Zhou, Chao,et al."Enhanced polarization switching characteristics of HfO₂ ultrathin films via acceptor-donor co-doping".NATURE COMMUNICATIONS 15.1(2024):10.